Hostname: page-component-84b7d79bbc-c654p Total loading time: 0 Render date: 2024-07-29T19:22:16.317Z Has data issue: false hasContentIssue false

Microtopography of Ion Beam Etched NiP Films.

Published online by Cambridge University Press:  25 February 2011

Kazuhiko Noguchi
Affiliation:
Manufacturing Development Laboratory, Mitsubishi Electric Corp., Amagasaki, Hyogo, Japan
Ryuzi Ueda
Affiliation:
Manufacturing Development Laboratory, Mitsubishi Electric Corp., Amagasaki, Hyogo, Japan
Yoshitaka Maeyama
Affiliation:
Manufacturing Development Laboratory, Mitsubishi Electric Corp., Amagasaki, Hyogo, Japan
Get access

Abstract

The microtopography of NiP films ( P content, 8.7–12wt.%; thickness, 40–50 μm ) prepared by electroless plating on 18–8 stainless steel plates for molds and etched with a 10 keV Ar+ ion beam was studied both by SEM observations and Talystep surface profile measurements. With films containing less than 9.6wt.%P, which is supposed to have a transient structure between the supersaturated solid solution and the amorphous solid, smooth surfaces were obtained down to a few micrometers of etch depth and after that craters were formed. As for the mechanism of crater formation, it is considered that Ni crystallites locally precipitate by ion bombardment and then are etched selectively. With amorphous films containing 10.6wt.%P, microcavities less than 0.02 μmRmax instead of craters were observed regardless of the etch depth. The ion beam etching of NiP films has been found to be very promising for the preparation of precision molds of various grades, e.g. for plastic lenses used in opto-electronics, by selecting P content according to the desired surface roughness and etch depth of a particular application.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Graham, A.H. et al., J. Electrochem. Soc., 112, 401 (1965).CrossRefGoogle Scholar
[2] Cargill, G.S., J. Appl. Phys., 41, 12 (1970).Google Scholar
[3] Matsuoka, M., in Physical Properties of Functional Plating Films, edited by Society for Scientific Research of Electro-plating, ( Daily Industrial News, JAPAN, 1986 ), pp.8287.Google Scholar