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Midgap Defects in a-SiGe:H Devices from Capacitance Measurements
Published online by Cambridge University Press: 25 February 2011
Abstract
We have measured the capacitance of a-SiGe:H p-i-n solar cells as functions of temperature, frequency and bias. The density of states at the Fermi level g(EF) has been determined from two methods. We find that g(EF) increases from 1–2×1016 to 5–10×1017/(cm3eV) as the Ge content increases from 0 to 63%.
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- Copyright © Materials Research Society 1989
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