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Miniaturization of Electromagnetic Bandgap Structures with Thin Film Dielectrics for Si Interposer Applications
Published online by Cambridge University Press: 15 March 2011
Abstract
We have developed miniaturized electromagnetic bandgap (EBG) structures on Si having a stopband that covers the 2.4 GHz band. By combining thin film dielectrics with inductance-enhanced EBG structures, the unit cell size can be reduced to 1 mm × 1 mm or less. Like the EBG structures embedded in conventional printed circuit boards, the stopbands can be designed using the transmission-line theory. The developed EBG structures can be integrated into Si interposers to suppress power noise.
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- Copyright © Materials Research Society 2010
References
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