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Misfit Dislocations at II-VI/GaAs Interfaces

Published online by Cambridge University Press:  21 February 2011

A. F. Schwartzman
A. F. Schwartzman*
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305.
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Abstract

High-resolution electron microscopy -is used to characterize the defect structure of CdTe/GaAs and ZnTe/GaAs heterojunctions before and after annealing. For as-deposited films, a variety of defects exist both in the form of perfect misfit dislocations at the interface and extended defects into the thin film. The extended defects result from dissociation of 60° dislocations and reactions between perfect and partial dislocations lying on intersecting slip planes. The annealed interfaces consist of a periodic array of perfect edge Lomer dislocations, the most efficient type of misfit dislocation for accomodating the lattice mismatch, 14.6 % for CdTe/GaAs and 8 % for ZnTe/GaAs. In both cases, the spacing between dislocations corresponds to the value predicted for completely strain-free thin fims, 31 and 54 Å for CdTe and ZnTe respectively. This paper concentrates on the different dislocation reactions which transform the interfacial structure from the as-deposited case to the annealed case.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 183: Symposium E – High Resolution Electron Microscopy of Defects in Materials , 1990 , 161
Copyright
Copyright © Materials Research Society 1990

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References

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