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MOCVD Growth and Characterization of (BaxSr1−x)Ti1+yO3+z Thin Films for High Frequency Devices

Published online by Cambridge University Press:  10 February 2011

P.K. Baumann ,
D.Y. Kaufman ,
S.K. Streiffer ,
J. IM ,
O. Auciello ,
R.A. Erck ,
J. Giumarra ,
J. Zebrowski ,
P. Baldo  and
A. McCormick
P.K. Baumann
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, IL 60439
D.Y. Kaufman
Affiliation:
Argonne National Laboratory, Energy Technologies Division, Argonne, IL 60439
S.K. Streiffer
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, IL 60439
J. IM
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, IL 60439
O. Auciello
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, IL 60439
R.A. Erck
Affiliation:
Argonne National Laboratory, Energy Technologies Division, Argonne, IL 60439
J. Giumarra
Affiliation:
Argonne National Laboratory, Energy Technologies Division, Argonne, IL 60439
J. Zebrowski
Affiliation:
New Brunswick Laboratory, Argonne, IL 60439
P. Baldo
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, IL 60439
A. McCormick
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, IL 60439
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Abstract

We have investigated the structural and electrical characteristics of (BaxSr1−x)Ti1+yO3+z (BST) thin films. The BST thin films were deposited at 650°C on platinized silicon with good thickness and composition uniformity using a large area, vertical liquid-delivery metalorganic chemical vapor deposition (MOCVD) system. The (Ba+Sr)/Ti ratio of the BST films was varied from 0.96 to 1.05 at a fixed Ba/Sr ratio of 70/30, as determined using x-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). Patterned Pt top electrodes were deposited onto the BST films at 350°C through a shadow mask using electron beam evaporation. Annealing the entire capacitor structure in air at 700°C after deposition of top electrodes resulted in a substantial reduction of the dielectric loss. Useful dielectric tunability as high as 2.3:1 was measured.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 603: Symposium KK – Materials Issues for Tunable RF & Microwave Devices , 1999 , 169
Copyright
Copyright © Materials Research Society 2000

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