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MOCVD Growth of Copper and Copper Oxide Films from Bis-β-Diketonate Complexes of Copper. The Role of Carrier Gas on Deposit Composition.

Published online by Cambridge University Press:  15 February 2011

William S. Rees Jr.  and
Celia R. Caballero
William S. Rees Jr.
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida 32306-3006, U.S.A.
Celia R. Caballero
Affiliation:
Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida 32306-3006, U.S.A.
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Abstract

An examination of thermal chemical vapor deposit elemental composition by EDAX has been completed for material films grown from Cu(acac)2 and Cu(tmhd)2 (acac = pentane-2,4-dionate; tmhd = 2,2,6,6-tetramethylheptane-3,5-dionate), using both hydrous and anhydrous carrier gas steams each of reducing (H2), inert (H2), and oxidizing (O2) composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 250: Symposium R – Chemical Vapor Deposition of Refractory Metals and Ceramics II , 1991 , 297
Copyright
Copyright © Materials Research Society 1992

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References

1. a) Murarka, S. and Peckeror, M. C., Electronic Materials Science and Technology Academic Press: New York; 1989.Google Scholar
b) Shin, H. H., Chi, K.-M., Hampden-Smith, M. J., Kodas, T. T., Farr, J. D., and Paffett, M. F. in Chemical Perspectives of Microelectronic Materials II, Interrante, L. V., Jensen, K. F., Dubois, L. H., and Gross, M. E., Eds., MRS Proceedings, Vol.204, Materials Research Society: Pittsburgh, Pennsylvania; 1991, pp. 421–426.Google Scholar
c) Xue, G., Dong, J., and Sheng, Q., J. Chem. Soc., Chem. Commun, 1991,407.CrossRefGoogle Scholar
d) Kaloyeros, A. E., Feng, A., Garhart, J., Brooks, K. C., Ghosh, S. K., Saxena, A. N., and Luehrs, F., J. Electronic Mater., 1990, 19,271.Google Scholar
e) Kaloyeros, A. E., Saxena, A. N., Brooks, K., Ghosh, S., and Eisenbraun, E., in Advanced Metallizations In Microelectronics, Katz, A., Murarka, S. P., and Appelbaum, A., Eds., MRS Proceedings Vol.181, Materials Research Society Pittsburgh: 1990, pp. 79–84.Google Scholar
f) Trundle, C. and Brierley, C. J., App/. Surf. Sci., 1989, 36,102.Google Scholar
g) Poston, S. and Reisman, A., J. Electronic Matls., 1989, 18, 79.Google Scholar
h) Temple, D. and Reisman, A., J. Electrochem. Soc., 1989, 136, 3525.Google Scholar
i) Awaya, N. and Arita, Y., Abst. Symp. VLSI Technol. #12–4, Kyoto, 1989, 103.Google Scholar
j) Oehr, C. and Suhr, H., Appl. Phys. A, 1988, 45,151.Google Scholar
k) Moylan, C. R., Baum, T. H., and Jones, C. R., Appl. Phys. A., 1986, 40, 1.Google Scholar
l) Houle, F. A., Wilson, R. J., and Baum, T. H., J. Vac. Sci. Technol., A, 1986, 4, 2452.Google Scholar
m) Braichotte, D. and van den Bergh, H., Springer Ser. Opt. Sci., 1985, 48, 38.CrossRefGoogle Scholar
n) Houle, F. A., Jones, C. R., Baum, T. H., Pico, C., and Kovac, C. A., Appl. Phys. Lett., 1985, 46, 204.Google Scholar
o) Jones, C. R., Houle, F. A., Kovac, C. A., and Baum, T. H., Appl. Phys. Lett., 1985, 46, 97 Google Scholar
p) Houle, F. A., Jones, C. R., Wilson, R., and Baum, T. H., in Laser Chemical Processing of Semiconductor Devices, Extended Abstracts, Houle, F. A., Deutsch, T. F., and Osgood, R. M. Jr., Eds., MRS Proceedings Symposium B, 1984 Fall Meeting, Boston, Materials Research Society, Pittsburgh: 1984, pp. 64–66.Google Scholar
q) Braicholle, D. and van den Bergh, H., Springer Ser. Chem. Phys., 1984, 39,183.Google Scholar
r) Van Hemert, R. L., Spendlove, L. B., and Sievers, R. E., J. Electrochem. Soc., 1965, 112, 1123–1126.Google Scholar
2 For an excellent review on the early work in this area, see: Tonge, L. M., Richeson, D. S., Marks, T. J., Zhao, J., Zhang, J., Wessels, B. W., Marcy, H. O., and Kannewurf, C. R., in: Electron Transfer in Biology and the Solid State: Inorganic Compounds With Unusual Properties, Part Ill; Johnson, M. K., King, R. B., Kurtz, D. M. Jr., Kutal, C., Norton, M. L., and Scott, R. A., Eds., American Chemical Society Advances in Chemistry Series, Number 226; American Chemical Society: Washington, D. C.; 1990, pp. 351–368.Google Scholar
3. a) Rees, W. S., Jr. and Caballero, C. R., Advanced Materials for Optics and Electronics, 1992, 1 (1), in the press.CrossRefGoogle Scholar
b) Rees, W. S. Jr, manuscript in preparafion, to be submitted for publication.Google Scholar
4. Mehrotra, R. C., Bohra, R., and Gaur, D. P., Metal β-Diketonates and Allied Derivatives, Academic: New York; 1978.Google Scholar
5. Chemical Rubber Company Handbook of Chemistry and Physics, 58th Edition, Weast, R. C., Ed., The Chemical Rubber Company: Cleveland, Ohio; 1977 - 1978, pp. D-51 - D-60.Google Scholar