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MOCVD growth of ZnCdSe on InP (001) substrates

Published online by Cambridge University Press:  10 February 2011

Hon-Kit Won  and
S. K. Hark
Hon-Kit Won
Affiliation:
Physics Department, The Chinese University of Hong Kong Shatin, Hong Kong
S. K. Hark
Affiliation:
Physics Department, The Chinese University of Hong Kong Shatin, Hong Kong
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Abstract

A series of ZnCdSe epitaxial films containing various amounts of Cd were grown on InP (001) substrates using DEZn, DMCd and DESe in the temperature range of 350 to 450°C. The composition and structure of the films were studied by EDX and high resolution X-ray diffraction techniques. It was found that Cd rich films were obtained at low while Zn rich films at high growth temperatures. Double-crystal rocking curves of the films showed that the Cd rich films have substantially fewer defects than similar films grown on GaAs. This improvement in structure is attributed to the closer match of the lattice parameters of lnP and ZnCdSe. The independent determination of composition and structure allowed us to measure the degree of relaxation of the films. We found that even for films whose thickness far exceeds the critical thickness, complete relaxation is not achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 199
Copyright
Copyright © Materials Research Society 1997

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