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MOCVD of Group III Chalcogenide Compound Semiconductors

Published online by Cambridge University Press:  15 February 2011

Andrew R. Barron
Andrew R. Barron*
Affiliation:
Department of Chemistry, Harvard University, 12 Oxford Street, Cambridge, MA 02138
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Abstract

A review is presented of recent advances in the metal-organic chemical vapor deposition (MOCVD) of thin films of group III-chalcogenides. The deposition of thermodynamic phases of composition ME and M2E3 (M = Ga, In; E = S, Se. Te) will be presented. Also included is a discussion of the development of molecular control over the structure of deposited films and the atmospheric pressure MOCVD growth of the high pressure phase of InS and a meta-stable cubic phase of GaS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 335: Symposium Y – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics , 1993 , 317
Copyright
Copyright © Materials Research Society 1994

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