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A Model for Laser Beam Induced Solid-State Crystal Growth in Silicon On Sapphire

Published online by Cambridge University Press:  15 February 2011

M. L. Burgener ,
R. E. Reedy  and
O. Csanadi
M. L. Burgener
Affiliation:
Naval Ocean Systems Center, Code 9251, San Diego, California, 92152
R. E. Reedy
Affiliation:
Naval Ocean Systems Center, Code 9251, San Diego, California, 92152
O. Csanadi
Affiliation:
Naval Ocean Systems Center, Code 9251, San Diego, California, 92152
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Abstract

An analytic model is presented for laser beam induced solid-state crystal growth in silicon on sapphire. The model, which assumes a single activation energy, utilizes temperature profiles calculated from a Green's function solution to the heat equation. Calculated crystal growth in silicon on sapphire is compared to experimentally measured values.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 495
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

[1] Fan, J.C., Geis, M. W. and Tsaur, B–Y, “Lateral Epitaxy by Seeded Solidification of Single–Crystal Si Films on Insulators,”; presented at 1980 IEDM, p.845.Google Scholar
[2] Biegelsen, D.K., Johnson, N.M., Bartelink, D.J. and Moyer, M.D. “Laser-induced crystallization of silicon islands on amorphous substrates: Multilayer structures,” A.P.L., 38(3), 15ø (1 Feb 81).Google Scholar
[3] Lax, M., “Temperature Rise Induced By A Laser Beam,” J.A.P. Vol.48, No.9, Sept.77.Google Scholar
[4] Cline, H.E. and Anthony, T.R., “Heat Treating and Melting Material With A Scanning Laser or Electron Beam,” J.A.P, Vol.48, No.9, Sept.77Google Scholar
[5] Nissim, Y.I., Lietoila, A., Gold, R.B. and Gibbons, J.F., “Temperature Distributions Produced in Semiconductors by a Scanning Elliptical or Circular CW Laser Beam,” J.A.P., Vol.51, No.1, Jan.8ø.CrossRefGoogle Scholar
[6] Gold, R.B. and Gibbons, J.F. “Modelling of Solid–Phase Thin–Film Reactions Induced By A Scanning CW Laser,” Laser and Electon Beam Processing of Materials, Academic Press, New York 77 (1981)Google Scholar
[7] Burgener, M.L., Reedy, R.E. and Csanadi, O., “Temperature Distributions Produced in A Two Layer Structure by a Scanning CW Laser or Electron Beam,” Submitted to J.A.P.CrossRefGoogle Scholar
[8] Carslaw, H.S. and Jaeger, J.C., Conduction of Heat in Solids, Second edition Oxford University Press, London, 89 (1959)Google Scholar
[9] Gold, R.B. and Gibbons, J.F. “Modelling of Solid–Phase Thin–Film Reactions Induced By A Scanning CW Laser,” Laser and Electon Beam Processing of Materials, Academic Press, New York 77 (1981)Google Scholar
[10] Csepregi, L., Kennedy, E.F., Mayer, J.W. and Sigman, T.W., “Substrate–Orientation Dependence of The Epitaxial Regrowth Rate From Si–Implanted Amorphous Si”, J.A.P. 49, 39ø 6(1978).Google Scholar
[11] Goldsmith, A., Waterman, T.E. and Hirschhron, H.J., Handbook of Thermophysical Properties of Solid Materials, Revised edition, Vol.3, Ceramics, The Macmillan Co. New York, 1961.Google Scholar
[12] Stijus, Erik “Measuring the Spot Size of a Gaussian Beam with an oscillating wire,” IEEE Journal of Quantum Electronics, Vol. Qe–16, No.12, Dec. 198ø.Google Scholar