Hostname: page-component-5c6d5d7d68-thh2z Total loading time: 0 Render date: 2024-08-20T01:22:05.227Z Has data issue: false hasContentIssue false
  • English
  • Français

A Model for the Application of Dlts on Normally-on Hemt Structures

Published online by Cambridge University Press:  26 February 2011

Y. J. Huang  and
D. E. Ioannou
Y. J. Huang
Affiliation:
Joint Program for Advanced Electronic Materials, Electrical Engineering Department, University of Maryland, College Park, MD 20742 and Laboratory for Physical Sciences, College Park, Maryland 20742
D. E. Ioannou
Affiliation:
Joint Program for Advanced Electronic Materials, Electrical Engineering Department, University of Maryland, College Park, MD 20742 and Laboratory for Physical Sciences, College Park, Maryland 20742
Get access

Abstract

This paper presents an analytical model for the application of capacitance DLTS on the normally-on HEMT structure. Based on the charge conservation law, the DLTS signal is derived by taking into account both the Schottky gate and the heterojunction depletion layer capacitances. It is shown that the anomalous features observed by using the conventional DLTS technique on a HEMT structure can be reasonably explained with this model. Some results obtained by simulation of typical measurements are presented, which confirm our conclusions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 145
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lang, D. V., J. Appl. Phys. 45, 3023 1974 CrossRefGoogle Scholar
2. Dhar, S., Hong, W. P., Bhattacharya, P. K., Nashimoto, Y., and Juang, F. Y., IEEE Trans. Devices ED–33, 698 1986 Google Scholar
3. Valois, A. J. and Robinson, G. Y., Lee, K., and Shur, M. S., J. Vac. Sci. Technol.B 1, 190 1983 Google Scholar
4. Drummond, T. J., Morkoc, H., Lee, K., and Shur, M., IEEE Trans. Devices Lett. EDL–3, 338 1982 CrossRefGoogle Scholar
5. Hirakawa, K., Sakaki, H., and Yoshino, J., Appl. Phys. Lett. 45, 253 1984 Google Scholar
6. Delagebeaudeuf, D. and Linh, N. T., IEEE Trans. Electron Devices ED–2, 955 1982 Google Scholar