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Modeling of Damage Enhanced Diffusion of Implanted Boron in Silicon

Published online by Cambridge University Press:  26 February 2011

V. C. Lo ,
S. P. Wong  and
Y. W. Lam
V. C. Lo
Affiliation:
Department of Applied Physics, Hong Kong Polytechnic, Kowioon, Hong Kong
S. P. Wong
Affiliation:
Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong.
Y. W. Lam
Affiliation:
Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong.
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Abstract

Modeling of the damage enhanced diffusion (DED) behaviors of implanted boron in silicon of Powell’s experiment [1] has been performed. In his experiment, Powell showed that the diffusion of implanted boron in silicon was dependent on implantation dosage as well as on the annealing conditions. For low dose boron implantation, the extent of boron diffusion after 15 second RTP is less than that of furnace annealing at 900°C for 30 minutes. But the reverse is true for the high dose case, and a two-step annealing leads to least and minimal diffusion. In this work, implantation induced excess self-interstitials which generate mobile boron atoms at the intersititial sites are considered the dominant point defect species responsible for the DED. Both the local relaxation and diffusion of these excess self-interstitials are considered. The features of the DED reported by Powell are successfully reproduced and explained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 265
Copyright
Copyright © Materials Research Society 1991

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