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Modeling of the Diffusion of Hydrogen in Silicon
Published online by Cambridge University Press: 25 February 2011
Abstract
A model is proposed to describe hydrogen motion in silicon near 150°C. This model leads to a consistent view of H° behaviour in low doped n and p-type Si, with a diffusivity in agreement with the high temperature data. On the other hand, a systematic variation of DH+ with the boron concentration forces us to conclude that some still unknown interactions take place and contribute to hydrogen trapping in highly doped p-Si.
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- Copyright © Materials Research Society 1990
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