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Modelling of Hg(3P1) Photosensitization of SiH4 and Surface Reactions of the SiH3 Radical

Published online by Cambridge University Press:  28 February 2011

Jérome Perrin  and
Ton Biroekhuizen
Jérome Perrin
Affiliation:
Equipe Synthese de Couches Minces pour l'Energétique (ER 258 CNRS) Ecole Polytechnique -91128 PALAISEAU Cedex (France)
Ton Biroekhuizen
Affiliation:
Equipe Synthese de Couches Minces pour l'Energétique (ER 258 CNRS) Ecole Polytechnique -91128 PALAISEAU Cedex (France)
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Abstract

We present an experimental study and modelling of gas phase and surface processes involved in mercury-sensitized decomposition of SiH4, leading to hydrogenated amorphous silicon (a-Si:H) film deposition in a parallel plate reactor. The total surface reaction proabability β and the sticking probability s of SiH3 on a growing a-Si:H film are determined in the 40° – 350°C temperature domain. At 100°C β ≈ 0.1 ± 0.01 whereas s ≈ β/4 which reveals an intense radical recombination on the surface. Both β and s increase as a function of temperature. At 350°C β reaches 0.21±0.01. These results are interpreted by a precursor state model for SiH3 adsorption.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 75: Symposium B – Photon, Beam, and Plasma Stimulated Chemical Processes at Surfaces , 1986 , 201
Copyright
Copyright © Materials Research Society 1987

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