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Modelling the MOS Device Conductance Using an Extended Tunnelling Model and Subsequent Determination of Interface Traps.

Published online by Cambridge University Press:  01 February 2011

N. Konofaos
N. Konofaos*
Affiliation:
Computer Engineering and Informatics Dept. & Research Academic Computer Technology Institute, Building B University Campus, Patras, Greece. email: nkonofao@ceid.upatras.gr
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Abstract

The contribution of the AC conductance on admittance spectroscopy measurements on Metal-Insulator-Semiconductor (MIS) devices allows the calculation of the interface traps density and the relevant time constant. Two equivalent model approaches can be applied in order to explain the experimental results. One model is the statistical model based on the Shockley- Read-Hall (S-R-H) recombination statistics and the other one is a model based on the quantum tunneling effect. Recent evidence suggest that the tunneling model can be equivalent to the statistical one if a continuum of states is also considered in the modeling, creating an extended tunneling model. In the present paper, a further investigation on the extended model is attempted. Admittance spectroscopy data were collected for various Insulator/Si combinations, such as SrTiO3 and BaTiO3 deposited on Si. Both the S-R-H based and the extended tunneling models were used to analyze the data. The results showed that the extended tunneling can model the conductance of the device successfully and can calculate the interface states density and the traps time constant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E4.25
Copyright
Copyright © Materials Research Society 2005

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