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Modification of Magnetron Sputtered A-Si1-Xcx:H Films by Implantation of sn+

Published online by Cambridge University Press:  21 February 2011

N. Tzenov ,
D. Dimova-Malinovska  and
T. Tsvetkova
N. Tzenov
Affiliation:
Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee blvd., 1784 Sofia, Bulgaria
D. Dimova-Malinovska
Affiliation:
Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee blvd., 1784 Sofia, Bulgaria
T. Tsvetkova
Affiliation:
Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee blvd., 1784 Sofia, Bulgaria
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Abstract

Implantation of Sn+ into a-Si1.xCx:H films deposited by RF magnetron sputtering of silicon and graphite was carried out in order to obtain optical contrast in the layers. The expected optical effect which is an absorption edge shift to the lower photon energies accompanied by a considerable increase of the absorption coefficient was observed even for the lowest dose - 1015cm-2. This effect is more pronounced with increase of the dose. Infrared (IR) and photoelectron spectroscopy (XPS) measurements was used to study the bond configurations of implanted films. These measurements reveal that ion implantation introduces an additional disorder in the films as well as leads to their chemical modification, which could be related to the changes of the optical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 243
Copyright
Copyright © Materials Research Society 1996

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