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Modification of Nanoporous Silica Structures by Fluorocarbon Plasma Treatment

Published online by Cambridge University Press:  17 March 2011

Woojin Cho ,
Ravi Saxena ,
Oscar Rodriguez ,
Ravi Achanta ,
Manas Ojha ,
Joel L. Plawsky ,
William. N. Gill  and
Mikhail R. Baklanov
Woojin Cho
Affiliation:
Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
Ravi Saxena
Affiliation:
Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
Oscar Rodriguez
Affiliation:
Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
Ravi Achanta
Affiliation:
Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
Manas Ojha
Affiliation:
Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
Joel L. Plawsky
Affiliation:
Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
William. N. Gill
Affiliation:
Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
Mikhail R. Baklanov
Affiliation:
IMEC, Leuven, Belgium
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Abstract

Polymerization occurring during fluorocarbon plasma treatment as a potential method for pore sealing was investigated. CHF3 was used as a reactant gas to expedite the rate of polymerization due to the presence of hydrogen and the low C/F ratio. The reactor pressure was varied from 30mTorr to 90mTorr to change the number of neutrals that act as the polymerizing species. The films were exposed to the plasma for times of 1min, 3min, and 5 min to observe the penetration depth of neutrals and the thickness of modified layer as a function of time. Dielectric constants were measured before and after plasma treatment. The film morphology was investigated by scanning electron microscopy before and after plasma treatment and a featureless surface morphology was observed at 90mTorr on a 56% porosity film. After plasma treatment, the average pore neck size decreases which may help reduce metal precursor penetration during metallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F6.7
Copyright
Copyright © Materials Research Society 2004

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References

1.International Technology Roadmap for Semiconductor, 2001.Google Scholar
2. Maex, K., Baklanov, M. R., Shamiryan, D., Lacopi, F., Brongersma, S. H., and Yanvitskaya, Z. S., Applied Physics Reviews, 93, 8793 (2003).CrossRefGoogle Scholar
3. Ho, P. S., Leu, J., Lee, W. W. (Eds.), Low Dielectric Constant Materials for IC Applications, Springer (2002).Google Scholar
4. Plawsky, J. L., Gill, W. N., Jain, A., and Rogojevic, S., Interlayer Dielectrics for Semiconductor Technology, Chapter 9, Murarka, S. P., Eizenberg, M., and Sinha, A. K. (Eds), Elsevier Inc., (2003).Google Scholar
5. Ritala, M. and Leskela, M., handbook of thin film materials, Nalwa, H. S. (Eds), Academic, (2002)Google Scholar
6. Iacopi, F., Baklanov, M. R., Sleeckx, E., Conard, T., Bender, H., Meynen, H., and Maex, K., J. Vac. Sci. Technol. 20, 109 (2002).CrossRefGoogle Scholar
7. Jain, A., Rogojevic, S., Gill, W. N., Plawsky, J. L., Matthew, I., Tomozawa, M., Simonyi, E., Chen, S. T. and Ho, P. S., J. Appl. Phys., 90(11), 5832 (2001).CrossRefGoogle Scholar
8. Jain, A., Rogojevic, S., Ponoth, S., Gill, W. N., Plawsky, J. L., Simonyi, E., Chen, S. T. and Ho, P. S.,. J. Appl. Phys., 91(5), 3275 (2002).CrossRefGoogle Scholar
9. Nitta, S. V., Pisupatti, V., Jain, A., Wayner, P. C. Jr, Gill, W. N., and Plawsky, J. L., J. Vac. Sci. Technol. B, 17, 205(1999).CrossRefGoogle Scholar
10. Saxena, R., Rodriguez, O., Cho, W., Gill, W. N., Plawsky, J. L., Baklanov, M. R., and Mogilnikov, K. P., J. Non-crystalline Solid, accepted (2004).Google Scholar
11. Baklanov, M. R., Moginikov, K. P., Polovinkin, V. G., Dultsev, F. N., “Determination of pore size distribution in thin films by ellipsometeric porosimetry”, J. Vac. Sci. Technol. B, 18(3), 1385 (2000).CrossRefGoogle Scholar
12. Baklanov, M. R., Mogilnikov, K. P., “Non-destructive characterization of porous low-k dielectric films”, Microelectronic Engineering, 64, 335 (2002).CrossRefGoogle Scholar