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Molecular Beam Epitaxy of II/VI Compounds for Blue/Green Laser Diodes

Published online by Cambridge University Press:  22 February 2011

J.M. Gaines
J.M. Gaines*
Affiliation:
Philips Laboratories, 345 Scarborough Road, Briarcliff Manor, NY 10510
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Abstract

The growth of I1/VI epitaxial layers by molecular beam epitaxy (MBE) for blue/green lasers is described. To elucidate the issues in the growth of II/VI materials, the differences between II/V and II/VI MBE growth are addressed, including factors such as: substrates, molecular beam sources, lattice matching, sticking coefficients, and surface diffusion. Results of reflection high-energy diffraction (RHEED) oscillation measurements are presented. RHEED oscillations have proven to be a valuable in-situ tool for controlling certain aspects of 1I/VI MBE growth, such as ZnSySe1-y composition, Zn1-xMgxSe composition, and the growth rate of ZnSe during migration-enhanced epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 419
Copyright
Copyright © Materials Research Society 1994

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References

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