Hostname: page-component-84b7d79bbc-tsvsl Total loading time: 0 Render date: 2024-07-29T17:26:22.284Z Has data issue: false hasContentIssue false
  • English
  • Français

Mombe Growth of GaP and its Efficient Photoeniiancement at Low Temperatures

Published online by Cambridge University Press:  25 February 2011

Masahiro Yoshimoto ,
Tsuzumi Tsuji ,
Atsushi Kajimoto  and
Hiroyuki Matsunami
Masahiro Yoshimoto
Affiliation:
Department of Electrical Engineering, Kyoto University, Sakyo, Kyoto 606–01, Japan
Tsuzumi Tsuji
Affiliation:
Department of Electrical Engineering, Kyoto University, Sakyo, Kyoto 606–01, Japan
Atsushi Kajimoto
Affiliation:
Department of Electrical Engineering, Kyoto University, Sakyo, Kyoto 606–01, Japan
Hiroyuki Matsunami
Affiliation:
Department of Electrical Engineering, Kyoto University, Sakyo, Kyoto 606–01, Japan
Get access

Abstract

GaP epllayers grown at temperatures ranging from 420 to 500°C had smooth surfaces and streaky RHEED patterns. The decomposition of group-III sources of TEGa limits the growth rates of GaP at lower substrate temperatures(<390 °C ). The growth rate of GaP epitaxial layers was efficiently enhanced by N2∼laser irradiation at lower substrate temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 487
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tsang, W. T., J. Electron. Mater. 15, 235 (1986).Google Scholar
2. Herman, M. A. and Sitter, H., Molecular Beam Epitaxy, (Springer, Berlin, 1989) p. 16.Google Scholar
3. Iga, R., Sugiura, H., Yamada, T., and Wada, K., Appl. Phys. Lett. 55, 451 (1989).Google Scholar
4. Yamada, T., Iga, R., and Sugiura, H.. in Proc. 16th Int. Sympo. GaAs & related Compounds 1989, (IPO, 1990, Bristol) p. 213.Google Scholar
5. Ozasa, K., Yuri, M., Tanaka, S. and Matsunaml, H.. J. Appl. Phys. 65, 2711 (1989).Google Scholar
6. Ozasa, K., Yuri, M. and Matsunaml, H., J. Crystal Growth 102, 31 (1990).Google Scholar
7. Sudarsan, U., Cody, N. W., Dosluglu, T. and Solanki, R., Appl. Phys. Let. 55, 738 (1989).CrossRefGoogle Scholar
8. Sudarsan, U., and Solanki, R., J. Appl. Phys. 67, 2913 (1990).Google Scholar
9. Okabe, H., Emadi-babaki, M. K., and McCrary, V. R., J. Appl. Phys. 69, 1730 (1991).Google Scholar
10. Sugiura, H., Iga, R., Yamada, T. and Yamaguchi, M., Appl. Phys. Let. 54, 335 (1989).Google Scholar