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Monitoring Of HF/H2O Treated Silicon Surfaces Using Noncontact Surface Charge Measurements

Published online by Cambridge University Press:  15 February 2011

P. Roman ,
D. Hwang ,
K. Torek ,
J. Ruzyllo  and
E. Kamieniecki
P. Roman
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
D. Hwang
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
K. Torek
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
J. Ruzyllo
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
E. Kamieniecki
Affiliation:
QC Solutions, Inc., Woburn, MA 01801
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Abstract

In this work, a new commercial system allowing non-contact measurement of the surface charge is used to monitor the condition of the silicon surface following HF/water etch. Results obtained demonstrate that by monitoring changes of surface charge using this system, a truly non-invasive, instant and easy to carry out characterization of Si surfaces after HF/water etch can be accomplished. The results show that HF/water exposure adds positive charge to the silicon surface. Change in the surface charge, considered to be indicative of the change in the electro-chemical condition of the surface, appears to precede initiation of the oxide etching process, and is proposed to be a factor in initiating etching reactions that involve mainly negatively charged species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 401
Copyright
Copyright © Materials Research Society 1995

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References

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