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Monitoring of the Surface Species on Silicon After Chemical Cleaning by FTIR Spectroscopy

Published online by Cambridge University Press:  15 February 2011

Chan-Hwa Chung ,
Chang-Koo Kim  and
Sang Heup Moon
Chan-Hwa Chung
Affiliation:
Department of Chemical Engineering, Seoul National University, Seoul 151-742, Korea
Chang-Koo Kim
Affiliation:
Department of Chemical Engineering, Seoul National University, Seoul 151-742, Korea
Sang Heup Moon
Affiliation:
Department of Chemical Engineering, Seoul National University, Seoul 151-742, Korea
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Abstract

For the analysis of as-cleaned surface, we have used a the unique IR method that uses a highsurface-area porous sample. We have observed by experiments that the oxide growth rate on silicon is reduced to a minimum when the surface is treated with a proper amount of HF vapor obtained from 1% I-IF solution. FTIR and XPS observations of the treated surface suggest that the oxide growth rate is closely related to the amount of the surface fluorides. In UV/O2 cleaning process, we have observed experimentally that addition of water vapor to cleaning gas stream enhances the cleaning efficiency by as much as 1.3 times.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 291
Copyright
Copyright © Materials Research Society 1995

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References

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