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Multilayer Analysis by Focused MeV Ion Beam

Published online by Cambridge University Press:  21 February 2011

M. Takai
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
A. Kinomura
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
M. Izumi
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
K. Matsunaga
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
K. Inoue
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
K. Gamo
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
M. Satou
Affiliation:
Government Industrial Research Institute Osaka, Ikeda, Osaka 563, Japan
S. Namba
Affiliation:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
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Abstract

A high-energy (MeV) helium ion beam has been focused down to 1 μm by a combination of piezo-driven objective slits and a magnetic quadrupole doublet. Rutherford backscattering (RBS) mapping techniques using focused MeV ion beams were, for the first time, applied to multilayered structures of metals, isolated with insulators, representing a test structure for multilayered wiring or interconnections of integrated circuits to nondestructively analyze the imperfection of the structures.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

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