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Multilayered Interconnections for VLSI

Published online by Cambridge University Press:  25 February 2011

Donald S. Gardner  and
Krishna Saraswat
Donald S. Gardner
Affiliation:
Integrated Circuits Laboratory Stanford University, Stanford, Calif. 94305
Krishna Saraswat
Affiliation:
Integrated Circuits Laboratory Stanford University, Stanford, Calif. 94305
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Abstract

Interconnections are predicted to become the limit in performance and reliability at submicron dimensions. Layered structures are one possible solution to the problems of electromigration and hillocks. Aluminum alloys can improve the properties of pure aluminum but with a consistent increase in resistivity due to lattice distortions introduced by the alloy in solid solution. The rise in resistivity is minimal in layered films because aluminum layers act as parallel conductors. Titanium is the most effective refractory metal for eliminating hillocks in layered films; however vanadium, tantalum, and tungsten also reduce hillocks to a manageable level although high resistivity, the inability to dry etch, or lateral hillocks can become a problem. Layered films of aluminum with TiSi2 encounter problems with hillocks. These differences are partially explained by the increased strength of the aluminide TiA13 that forms compared to the other compounds. Barrier metals are needed for aluminum layered with refractory metals because of the formation of ternary compounds, and several metals have proven to be satisfactory. Such barriers, however, are required for even aluminum at submicron dimensions for stable low-resistivity contacts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 103 , 1987 , 343
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

[1]Gardner, D. S., Meindl, J. D., and Saraswat, K. C.. IEEE Trans. on Electron Devices, ED-34(3), pp. 633–643, 1987.Google Scholar
[2]d'Heurle, F. M.. Metallurgical Trans., 2, pp. 683–689, 1971.Google Scholar
[3]Lee, W. and Eldridge., J. M.J. Appl. Phys., 52(4), p. 2994, 1981.Google Scholar
[4]Rosenberg, R., Sullivan, M. J., and Howard, J. K.. In Thin Films. Interdiffusion and Reactions., pp. 48–54, 1978.Google Scholar
[5]Thomas, S. and Berg., H. M. In Proc. Intl. Reliability Phys. Symp., IEEE Electron Devices and Reliability Societies, pp. 153–158, 1985.Google Scholar
[6]Flinn, P. A., Gardner, D. S., and Nix, W. D.. IEEE Trans. on Electron Devices, ED- 34(3), pp. 689–699, 1987.Google Scholar
[7]Caswell, H. L., Priest, J. R., and Budo, Y.. .J. Appl. Phys., 34(11), pp. 3261–3266, 1963.Google Scholar
[8]d'Heurle, F., Berenbaum, L., and Rosenberg, R.. Trans. AIME, 242, pp. 502–511, 1968.Google Scholar
[9]Dell'oca, C. J. and Learn, A. J.. Thin Solid Films, 8, pp. R47–R50, 1971.Google Scholar
[10]Faith, T. J.. J. Appl. Phys., 52(7), pp. 4630–4639, 1981.Google Scholar
[11]Grabe, B. and Schreiber, H. U.. Solid-State Electronics, 26, p. 1023, 1983.Google Scholar
[12]Gardner, D. S., Michalka, T. L., Barbee, T. W. Jr, Saraswat, K. C., McVittie, J. P., and Meindl, J. D.. In Proc. First Intl. IEEE VLSI Multilevel Interconnection Conf., pp. 68–77, 1984. Awarded Best Paper.Google Scholar
[13]Gardner, D. S., Michalka, T. L., Saraswat, K. C., Barbee, T. W. Jr, McVittie, J. P., and Meindl, J. D.. Trans. on Electron Devices and J. Solid-State Circuits, ED–32(2) and SC-20(1), 1985. Joint Special Issue on VLSI.Google Scholar
[14]Lim, S. C. P.. Semiconductor Intl., pp. 135–144, 1982.Google Scholar
[15]Cadien, K. C. and Losee, D. L.. J. Vac. Sci. Technol., B2(1), pp. 82–83, 1984. in Brief Reports and Comments.Google Scholar
[16]Rey, A., Noel, P., and Jeuch, P.. In 1984 Proc. First Intl. IEEE VLSI Multilevel Interconnection Conf., p. 139, 1984.Google Scholar
[17]Ghate, P. B. and Blair, J. C.. Thin Solid Films, 55, p. 113, 1978.Google Scholar
[18]Howard, J. K., White, J. F., and Ho, P. S.. J. Appl. Phys., 49(7), p. 4083, 1978.Google Scholar
[19]d'Heurle, F. M. and Gangulee, A.. In The Nature and Behavior of Grain Boundaries, Metallurgical Society of AIME, Plenum Press, New York, pp. 339–370, 1972.Google Scholar
[20]Hinode, K., Iwata, S., and Ogirima, M.. In Extended Abstracts–Electrochemical Society,83–1, p. 678, 1983.Google Scholar
[21]Faith, T. J. and Wu, C. P.. Appl. Phys. Lett., 45(4), pp. 470–472, 1984.Google Scholar
[22]Gardner, D. S., Beyers, R. B., Michalka, T. L., Saraswat, K. C., Barbee, T. W. Jr, and Meindl, J. D.. In Intl. Electron Devices Meeting Tech. Digest, IEEE Electron Devices Society, pp. 114–117, 1984.Google Scholar
[23]Gardner, D. S.. Layered and Homogeneous Alloys of Aluminum for Integrated Circuits.Ph.D. dissertation, Stanford University, 1987.Google Scholar
[24]-Gardner, D. S., Saraswat, K., and Barbee, T. W. Jr Layered and Homogeneous Films of Al and Al-Si with Ti and W for Multilevel Interconnects. U.S. Patent No. 4,673,623.Google Scholar
[25]Youdelis, W. V.. Metal Science, 12(8), pp. 363–366, 1978.Google Scholar
[26]Gardner, D. S., Michalka, T. L., Flinn, P. A., Barbee, T. W. Jr, Saraswat, K. C., and Meindl, J. D.. In 1985 Proc. Second Intl. IEEE VLSI Multilevel Interconnection Conf., pp. 102–113, 1985.Google Scholar
[27]Jones, R. E. Jr and Smith, L. D.. In 1985 Proc. Second Intl. IEEE VLSI Multilevel Interconnection Conf., pp. 194–200, 1985.Google Scholar
[28]Shen, B. W., Bonifield, T., and McPherson, J.. In 1985 Proc. Second Intl. IEEE VLSI Multilevel Interconnection Conf., pp. 114–120, 1985.Google Scholar
[29]Draper, B. L., Hill, T. A., and Bell, H. B.. In 1985 Proc. Second Intl. IEEE VLSI Multilevel Interconnection Conf., pp. 90–101, 1985.Google Scholar
[30Toi, S. and Choi, F.. In 1985 Proc. Second Intl. IEEE VLSI Multilevel Interconnection Conf., pp. 138–144, 1985.Google Scholar
[31]Finetti, M., Ronkainen, H., Blomberg, M., and Suni, I.. In Thin Films-Interfaces and Phenomena, Materials Res. Soc., 54, pp. 811–816, 1986.Google Scholar
[32]Shen, B. W., Anthony, J. M., Chang, P., Keenan, J., Matyi, R., and Tsai, H. L.. In Thin Films-Interfaces and Phenomena, Materials Res. Soc., 54, pp. 103–108, 1986.Google Scholar
[33]Mak, S., Dahlstrom, T., and K. S. Ravindhran. In 1986 Proc. Third Intl. IEEE VLSI Multilevel Interconnection Conf., pp. 65–70, 1986.Google Scholar
[34]Shen, B. W., Bonifield, T., and Blumenthal, R.. In 1986 Proc. Third Intl. IEEE VLSI Multilevel Interconnection Conf., pp. 191–197, 1986.Google Scholar
[35]Wada, Y.. J. Electrochem. Soc., 133(7), pp. 1432–1437, 1986.Google Scholar
[36]Nahar, R. K. and Devashrayee, N. M.. Materials Letters, 4 (5, 6,7), pp. 265–267, 1986.Google Scholar
[37]Dunn, C. F., Brotzen, F. R., and McPherson, J. W.. J. Electronic Materials, 15(8), pp. 273–277, 1986.Google Scholar
[38]Sum, J. C., Ray, G. W., Hsu, S., Marcoux, P. J., Kruger, J., Lin, C., Liu, E., and Peng, S.. In Multilevel Metallization, Interconnection, and Contact Technologies, The Electrochemical Society, 87–4, pp. 259–265, 1986.Google Scholar
[39]Nahar, R. K. and Devashrayee, N. M.. Appl. Phys. Lett., 50(3), pp. 130–131, 1987.Google Scholar
[40]LeGoues, F. K., Wittmer, M., Kwok, T., Huang, H. C. W., and Ho, P. S.. J. Electrochem. Soc., 134(4), pp. 940–944, 1987.Google Scholar
[41]Brown, A. A., Affolter, K. B., Jennings, S. R., and Rosser, P. J.. In 1987 Proc. Fourth Intl. IEEE VLSI Multilevel Interconnection Conf., pp. 426–433, 1987.Google Scholar
[42]Ball, R. K. and Todd, A. G.. Thin Solid Films, 149, pp. 269–282, 1987.Google Scholar
[43]Yamamoto, H., Fujii, S., Kakiuchi, T., Yano, K., and Fujita, T.. In Intl. Electron Devices Meeting Tech. Digest, IEEE, pp. 205–208, 1987.Google Scholar
[44]Eggers, H. and Hieber, K.. In Intl. Electron Devices Meeting Tech. Digest, IEEE, pp. 200–204, 1987.Google Scholar
[45]Chambers, S.. In Extended Abstracts of the 172nd Meeting of the Electrochemical Society, pp. 671–672, 1987.Google Scholar
[46]Hinode, K., Owada, N., and Terada, T.. In Proc. Third Intl. IEEE VLSI Multilevel Interconnection Conf., pp. 139–145, 1986.Google Scholar
[47]Hinode, K., Owada, N., and Terada, T.. IEEE Trans. on Electron Devices, ED-34(3), pp. 700–705, 1987.Google Scholar
[48]Shima, S., Moriya, T., and Kashiwagi, M.. In 1984 Proc. First Intl. IEEE VLSI Multilevel Interconnection Conf., p. 61, 1984.Google Scholar
[49]Kamei, Y., Kameda, M., and Nakayama, H.. In 1984 Intl. Electron Devices Meeting Tech. Digest, IEEE, pp. 138–141, 1984.Google Scholar
[50]Nakamura, K., Lau, S. S., Nicolet, M., and Mayer, J. W.. Appl. Phys. Lett., 28(5), pp. 277–280, 1976.Google Scholar
[51]Eizenberg, M., Thompson, R. D., and Tu, K. N.. J. Appl. Phys., 53(10), pp. 6891–6897, 1982.Google Scholar
[52]Bower, R. W.. Appl. Phys. Lett., 23(2), p. 99, 1973.Google Scholar