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Multiwafer Production of Long Wavelength Epitaxial Material

Published online by Cambridge University Press:  25 February 2011

M. Heyen ,
D. Schmitz ,
G. Strauch  and
H. JÜrgensen
M. Heyen
Affiliation:
AIXTRON GmbH, Kackertstra=e 15-17, D-5100 Aachen, FRG
D. Schmitz
Affiliation:
AIXTRON GmbH, Kackertstra=e 15-17, D-5100 Aachen, FRG
G. Strauch
Affiliation:
AIXTRON GmbH, Kackertstra=e 15-17, D-5100 Aachen, FRG
H. JÜrgensen
Affiliation:
AIXTRON GmbH, Kackertstra=e 15-17, D-5100 Aachen, FRG
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Extract

Low pressure MOVPE in a horizontal reactor has proven to be capable of yielding uniform InP, GalnAs and GaInAsP layers [1, 2]. However, the complexity of some devices as MQW lasers and HEMTs require even further improvement in thickness and compositional uniformity. This can be achieved by using the technique of sub-strate rotation to overcome gas phase depletion problems and geometry related non uniformities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 313
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Heyen, M., Heuken, M., Strauch, G., Schmitz, D., Jorgensen, H. and Heime, K.: Proc. of MRS Spring Meeting, San Diego CA (1989) 245.Google Scholar
[2] Schmitz, D., Strauch, G., Jörgensen, H., Heyen, M. and Harde, P.: Proc. “1st Int'l. Conf. on InP and Rel. Comp.”, Norman OK (1989).Google Scholar
[3] Mircea, A., Mellet, R., Rose, B., Dasté, P. and Schiavini, G.: J. Cryst. Growth 77 (1986) 340.Google Scholar
[4] Woelk, E. and Beneking, H.: J. Cryst. Growth 93 (1988) 216.CrossRefGoogle Scholar
[5] Frijlink, P.M.: J. Cryst. Growth 93 (1988) 207.Google Scholar
[6] Frijlink, P.M.: Accepted for publication in J. Cryst. Growth “Conf. Proc. IC MOVPE 5”, Aachen FRG (1990)Google Scholar