Hostname: page-component-77c89778f8-gq7q9 Total loading time: 0 Render date: 2024-07-19T23:25:29.406Z Has data issue: false hasContentIssue false
  • English
  • Français

Nano-Patterning of Graphene Structures Using Highly Focused Beams of Gallium Ions

Published online by Cambridge University Press:  01 February 2011

Jacques Gierak ,
Damien Lucot ,
Abdelkarim Ouerghi ,
Gilles Patriarche ,
Eric Bourhis ,
Giancarlo Faini  and
Dominique Mailly
Jacques Gierak
Affiliation:
jacques.gierak@lpn.cnrs.fr, LPN CNRS, Route de Nozay, Marcoussis, 91460, France
Damien Lucot
Affiliation:
damien.lucot@lpn.cnrs.fr, LPN CNRS, Marcoussis, France
Abdelkarim Ouerghi
Affiliation:
abdelkarim.ouerghi@lpn.cnrs.fr, LPN CNRS, Marcoussis, France
Gilles Patriarche
Affiliation:
gilles.patriarche@lpn.cnrs.fr, LPN CNRS, Marcoussis, France
Eric Bourhis
Affiliation:
eric.bourhis@lpn.cnrs.fr, LPN CNRS, Marcoussis, France
Giancarlo Faini
Affiliation:
giancarlo.faini@lpn.cnrs.fr, LPN CNRS, Marcoussis, France
Dominique Mailly
Affiliation:
Dominique.Mailly@lpn.cnrs.fr, LPN CNRS, Marcoussis, France
Get access

Abstract

Graphene is generating a considerable interest in materials science and condensed-matter physics. One crucial technological problem, that will govern future applicability of this material, is related to the patterning of graphene while preserving the exceptionally high crystallinity and electronic properties of this material. This article is aiming at demonstrating that a highly focused beam of gallium ions can be applied for sculpting ultra-thin and high quality suspended graphene nano-ribbons (GNRs).

Keywords

ion-beam processingion-solid interactionsmicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1259: Symposium S – Graphene Materials and Devices , 2010 , 1259-S18-04
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Gierak, J., Semicond. Sci. Technol. 24, 043001 (2009).Google Scholar
[2] Reyntjens, S. and Puers, R., J. Micromech. Microeng. 11, 287 (2001).Google Scholar
[3] ftp://ftp.cordis.europa.eu/pub/nanotechnology/docs/n s nanofib 27052002.pdf Google Scholar
[4] Van Es, J.J., Gierak, J, Forbes, R.G., Suvorov, V., Van den Berghe, T., Dubuisson, P., Monnet, I. I, and Septier, A., Microelectron. Eng. 73–74 132 (2003).Google Scholar
[5] Hawkes, P.W., Lencová, B., Enano newsletter December 2006, www.phantomsnet.net Google Scholar
[6] Gierak, J., Madouri, A., Biance, A.L., Bourhis, E., Patriarche, G., Ulysse, C., Lucot, D., Lafosse, X., Auvray, L., Bruchhaus, L. and Jede, R., Microelectron. Eng. 84, 779 (2007)Google Scholar
[7] Ziegler, J.: www.srim.org Google Scholar
[8] Geim, A.K. and Novoselov, K.S., Nat. Mater. 6, 183 (2007).Google Scholar
[9] Novoselov, K.S., Geim, A.K., Morozov, S.V., Jiang, D., Katsnelson, M.I., Grigorieva, I.V., Dubonos, S.V. and Firsov, A.A., Nature 438, 197 (2005).Google Scholar
[10] Zhang, Y., Tan, Y., Stormer, H. L. and Kim, P., Nature 438, 201 (2005).Google Scholar
[11] Liang, G., Neophytou, N., Nikonov, D. E. and Lundstrom, M. S., IEEE Trans. Elec. Dev. 54, 657 (2007).Google Scholar
[12] Bunch, J.S., van der Zande, A.M., Verbridge, S.S., Frank, I.W., Tanenbaum, D.M., Parpia, J.M., Craighead, H.G., and McEuen, P.L., Science 315, 490 (2007).Google Scholar
[13] Rana, F., IEEE Trans. Nanotechnology 7, 91 (2008).Google Scholar
[14] Tapaszto, L., Dobrik, G., Lambin, P., Biro, L.P., Nat. Nano. 3, 397 (2008)‥Google Scholar
[15] Chen, J.H, Jang, C., Xiao, S., Ishigami, M., and Fuhrer, M. S., Nat. Nano. 3, 206 (2008)Google Scholar
[16] Du, X., Skachko, I., Barker, A. and Andrei, E. Y., Nat. Nano. 3, 491 (2008).Google Scholar
[17] Morozov, S. V., Novoselov, K. S., Katsnelson, M. I., Schedin, F., Elias, D. C., Jaszczak, J. A., and Geim, A. K., Phys. Rev. Lett. 100, 016602 (2008).Google Scholar
[18] Bolotin, K. I., Sikes, K. J., Hone, J., Stormer, H. L., and Kim, P., Phys. Rev. Lett. 101, 096802 (2008).Google Scholar
[19] Lucot, D., Gierak, J., Ouerghi, A., Bourhis, E., Faini, G. and Mailly, D., Microelectron. Eng. 86, 882 (2009).Google Scholar
[20] Gierak, J., BenAssayag, G., Schneider, M., Vieu, C., and Marzin, J.Y., Microelectron. Eng. 30, 253 (1996).Google Scholar
[21] Han, M.Y., Özyilmaz, B., Zhang, Y., and Kim, P., Phys. Rev. Lett. 98, 206805 (2007).Google Scholar
[22] Nakada, K., Fujita, M., Dresselhaus, G., and Dresselhaus, M., Phys. Rev. B, vol. 54, p. 17954, 1996.Google Scholar
[23] Miyamoto, Y., Nakada, K., and Fujita, M., Phys. Rev. B, vol. 59, pp. 9858–9861, 1999.)Google Scholar
[24] Lehtinen, O., Kotakoski, J., Krasheninnikov, A. V., Tolvanen, A., Nordlund, K., and Keinonen, J., Phys. Rev. B 81 153401 (2010)Google Scholar
[25] Lemme, M.C., Bell, D.C., Williams, J.R., Stern, L.A., Baugher, B.W.H., Jarillo-Herrero, P., and Marcus, C. M., ACS nano, VOL. 3, NO. 9, p2674 Google Scholar
[26] Pickard, D., Zeiss seminar on the Orion at Microscopy and Microanalysis, Richmond, Virginia, USA 26–30 July 2009 Google Scholar