Hostname: page-component-77c89778f8-swr86 Total loading time: 0 Render date: 2024-07-20T10:11:37.858Z Has data issue: false hasContentIssue false
  • English
  • Français

Nanostructure and Electrical Properties of Anodized Al Gate Insulators for Thin-Film Transistors

Published online by Cambridge University Press:  10 February 2011

Toshiaki Arai ,
Yasunobu Hiromasu  and
Satoshi Tsuji
Toshiaki Arai
Affiliation:
IBM Yamato Laboratory, 1623-14 Shimo-tsuruma, Yamato-shi, Kanagawa 242, Japan
Yasunobu Hiromasu
Affiliation:
IBM Yamato Laboratory, 1623-14 Shimo-tsuruma, Yamato-shi, Kanagawa 242, Japan
Satoshi Tsuji
Affiliation:
IBM Yamato Laboratory, 1623-14 Shimo-tsuruma, Yamato-shi, Kanagawa 242, Japan
Get access

Abstract

A novel anodic oxidation method for aluminum thin-film on the glass substrate is proposed for the fabrication of a gate insulator in thin-film transistor (TFT). A proposed rear-positioned cathode makes for much more smooth surface with an average surface roughness of under 4 nm in comparison with conventional cathode positions. The anodic oxidation conditions were comprehensively investigated. The current density, ethylene glycol concentration, and cathode position were chosen as the elements of anodic oxidation condition matrix, and all these conditions affected the film formation. The surface morphology and nanostructure of the anodized films were characterized with an atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (TEM). Films formed at higher ethylene glycol concentrations of over 50% and higher current densities of over 0.9 mA/cm2 exhibited higher breakdown electric fields of over 7 MV/cm, and lower leakage currents. These films had relatively smooth surfaces and took on the shapes of the underlying aluminum. In contrast, films formed at lower ethylene glycol concentrations of under 50% and lower current densities of under 0.9 mA/cm2 had rough surfaces and microvoids. A high concentration of ethylene glycol increases the cost of mass production, however, the proposed rear-positioned cathode method can be achieved even when the concentration of ethylene glycol is under 50%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 37
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Dohjo, M., Aoki, T., Suzuki, K., Ikeda, M., Higuchi, T., and Oana, Y., in SID International Symposium Tech. Dig., p.330 (1988).Google Scholar
2. Kanemori, Y., Katayama, M., Wakazawa, K., Kato, H., Yano, K., Furuoka, Y., Kanatani, Y., Ito, Y., and Hijikigawa, M., in SID International Symposium Tech. Dig., p.408 (1990).Google Scholar
3. Tsukada, T., MRS Symposium Proceedings v.284 p. 371–382 (1993).Google Scholar
4. Yamamoto, M., Kobayashi, I., Hirose, T., Bruck, S. M., Tsuboi, N., Mino, Y., Okafuji, M., and Tamura, T., '94 SID International Display Research Conference Digest, 142–145 (1994).Google Scholar
5. Fryer, P. M., Jenkins, L., John, R., Kuo, Y., Lien, A., Nywening, R., Owens, B., Palmateer, L., Rothwell, M. E., Souk, J., Wilson, J., Wright, S., Batey, J., and Wisnieff, R., '94 SID International Display Research Conference Digest, 146–149 (1994).Google Scholar
6. Grovenor, C. R. M., Microelectronic Materials (Institute of Physics, Oxford, England, 1992), p.67.Google Scholar
7. Yeh, C. F., Cheng, J. Y., and Lu, J. H., Jpn. J. Appl. Phys., Vol.32, 2803–2808 (1993).Google Scholar
8. Ozawa, K., Miyazaki, K., and Majima, T., J. Electrochem. Soc., Vol.141, No. 5, 1325–1333 (1994).Google Scholar