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Nd-YAG Laser Induced Crystallization on a-Si:H Thin Films

Published online by Cambridge University Press:  28 February 2011

J. Carvalho ,
I. Ferreira ,
B. Fernandes ,
J. Fidalgo  and
R. Martins
J. Carvalho
Affiliation:
CEMOP/UNINOVA, "Campus" da FCT-UNL, Quinta da Torre, 2825 Monte de Caparica, Portugal.
I. Ferreira
Affiliation:
Materials Science Department, Faculty of Science and Technology of New University of Lisbon
B. Fernandes
Affiliation:
Materials Science Department, Faculty of Science and Technology of New University of Lisbon
J. Fidalgo
Affiliation:
CEMOP/UNINOVA, "Campus" da FCT-UNL, Quinta da Torre, 2825 Monte de Caparica, Portugal.
R. Martins
Affiliation:
Materials Science Department, Faculty of Science and Technology of New University of Lisbon
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Abstract

In this paper we present results concerning the influence of laser energy and shot density on the electrical resistance, X-ray diffraction pattern, and structure obtained by SEM, on recrystallized a-Si:H thin films produced by using a Nd-YAG laser, working in a wavelength of 532 nm. The base material (undoped and doped a-Si:H) was obtained by Plasma Enhanced Chemical Vapour Deposition (PECVD). The structure and electrical characteristics of the recrystallized thin films are dependent on the laser beam energy density, beam spot size and the number of shots applied to the base a-Si:H thin film used. Overall, the data show recrystallized material with grain sizes larger than lµm, where the electrical resistance of both, undoped and doped materials, can be varied up to 5 orders of magnitude, by the proper choice of the recrystallization conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 915
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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