Hostname: page-component-7bb8b95d7b-2h6rp Total loading time: 0 Render date: 2024-10-04T03:21:30.724Z Has data issue: false hasContentIssue false
  • English
  • Français

New Algorithms for Rapid Full-Wafer Mapping by High Resolution Double Axis X-Ray Diffraction

Published online by Cambridge University Press:  22 February 2011

N Loxley ,
S Cockerton ,
L M Cooke ,
T Gray ,
B K Tanner  and
D K Bowen
N Loxley
Affiliation:
Bede Scientific, Bowburn, Durham, DH6 5PF, UK
S Cockerton
Affiliation:
Bede Scientific, Bowburn, Durham, DH6 5PF, UK
L M Cooke
Affiliation:
Bede Scientific Software Division, University of Warwick Science Park, Coventry, CV4 9EZ, UK
T Gray
Affiliation:
Bede Scientific Software Division, University of Warwick Science Park, Coventry, CV4 9EZ, UK
B K Tanner
Affiliation:
Department of Physics, Durham University, South Road, Durham, DHI 3LE, UK
D K Bowen
Affiliation:
Department. of Engineering, Warwick University, Coventry, CV4 7AL, UK
Get access

Abstract

We describe successful algorithms for rapid alignment of the Bragg planes normal to the incidence plane in a high resolution X-ray diffraction experiment. One is appropriate to the surface symmetric geometry and uses a technique of rotation about the specimen normal.

From an experimental study of the rocking curve shape as a function of tilt, we have developed a new algorithm which uses tilting about an axis formed by the intersection of the specimen and incidence planes. This has been shown to be reliable for rapid optimization of the diffraction conditions for wafers cut up to 15° off the (001) plane and for asymmetric reflections. Additionally algorithms are outlined which permit rapid location of the maximum of the Bragg peak and deduction of the mean wafer curvature from the X-ray data

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 451
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Bowen, D. K. and Tanner, B. K., J. Crystal Growth 126 1 (1993)Google Scholar
2. Bowen, D. K., Loxley, N. and Tanner, B. K., M.R.S. Symp. Proc. 208 119 (1991)Google Scholar
3. Fewster, P. F., J. Appl. Cryst. 18 334 (1985)Google Scholar
4. Bowen, D. K., Chu, X. and Tanner, B. K., Mater. Res. Soc. Symp. Proc. 69 191 (1986)Google Scholar