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New method of ferroelectric thin film characterization using a polarization instability invoked by a voltage cycling

Published online by Cambridge University Press:  26 February 2011

Yuki Yamada ,
Susumu Shuto  and
Iwao Kunishima
Yuki Yamada
Affiliation:
yuki.yamada@toshiba.co.jp, TOSHIBA Corp., 8, Shinsugita-cho, Isogo-Ku, Yokohama, N/A, N/A, Japan
Susumu Shuto
Affiliation:
susumu.shuto@toshiba.co.jp, TOSHIBA Corp., Japan
Iwao Kunishima
Affiliation:
iwao.kunishima@toshiba.co.jp, TOSHIBA Corp., Japan
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Abstract

The polarization change invoked by bipolar pulse cycling stress (voltage cycling) was investigated in detail for a Pt/PZT/Pt ferroelectric capacitor. The remnant polarization increased after voltage cycling, then, it decreased during storage and approached to the initial value. The estimated activation energy of the decay of the gained-polarization during the storage was 0.52eV. This value suggests that the valence change between Ti3+ and Ti4+ is the key of this phenomenon. The model where Ti-related defects pin the polarization was introduced to explain the result. Based on the findings and the model, a combination of voltage cycling and storage is useful to characterize internal defects. We propose this characterization method, named voltage cycling method, as an effective way to analyze internal defects in a ferroelectric capacitor.

Keywords

ferroelectricdefectspowder processing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 902: Symposium T – Ferroelectric Thin Films XIII , 2005 , 0902-T06-05
Copyright
Copyright © Materials Research Society 2006

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References

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