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A New Quantitative Roughness Measurement and its Application in the Polysilicon/Silicon Dioxide Interface

Published online by Cambridge University Press:  25 February 2011

Su-Heng Lin  and
Miltiadis K. Hatalis
Su-Heng Lin
Affiliation:
Department of Electrical Engineering and Computer Science, Sherman Fairchild Center for Solid State Studies, Lehigh University, Bethlehem, Pennsylvania, 18015
Miltiadis K. Hatalis
Affiliation:
Department of Electrical Engineering and Computer Science, Sherman Fairchild Center for Solid State Studies, Lehigh University, Bethlehem, Pennsylvania, 18015
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Abstract

A quantitative approach for characterizing the interface roughness between two materials by cross sectional transmission electron microscopy (XTEM) is proposed. This approach is based on obtaining an interface height distribution curve (IHDC). The interface roughness can be characterized quantitatively by extracting from IHDC three parameters: the mean, median and maximum interface height. This new method has been applied in the characterization of the interface between thermally grown silicon dioxide and polycrystalline silicon thin films deposited by low pressure chemical vapor deposition. It is shown that high temperature processing yields an interface that has higher roughness.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 285
Copyright
Copyright © Materials Research Society 1993

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References

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