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A New Recrystallization Technique for Large Area Thin Film Silicon on Glass Structure
Published online by Cambridge University Press: 28 February 2011
Abstract
A new recrystallization technique has been proposed, with which a large area thin film silicon on glass structure is able to be recrystallized. The technique utilizes self-heat-confinement caused by induction eddy currents, analogous to floating zone crystal refining technique. An experimental recrystallization system is shown. A recrystallized silicon layer with some hundred micron grain size was obtained with the system.
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- Copyright © Materials Research Society 1991
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