Hostname: page-component-78c5997874-mlc7c Total loading time: 0 Render date: 2024-11-01T19:50:51.782Z Has data issue: false hasContentIssue false
  • English
  • Français

A New Self-Aligned A-SI TFT Using Ion Doping and Chromium Silicide Formation

Published online by Cambridge University Press:  21 February 2011

S. Nishida ,
H. Uchida  and
S. Kaneko
S. Nishida
Affiliation:
Functional Devices Research Laboratories, NEC Corporation, 4–1–1 Miyazaki Miyamae-ku Kawasaki, Kanagawa 216, Japan
H. Uchida
Affiliation:
Functional Devices Research Laboratories, NEC Corporation, 4–1–1 Miyazaki Miyamae-ku Kawasaki, Kanagawa 216, Japan
S. Kaneko
Affiliation:
Functional Devices Research Laboratories, NEC Corporation, 4–1–1 Miyazaki Miyamae-ku Kawasaki, Kanagawa 216, Japan
Get access

Abstract

A new self-aligned a-Si TFT has been developed. Ion doping and chromium silicide (CrSix) formation technique was used to fabricate source and drain, which are self-aligned to the gate electrode, instead of using the previously reported lift-off process. The fabricated TFT mobility is about 0.5cm2/V' sec and threshold voltage is about 3V. The ON/OFF ratio is over 106. The actions of as short as 2μm channel TFT have been confirmed, using a large area TFT process. These results show that this technique can be applicable to manufacturing high quality TFT-LCDs in a large area.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 303
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Busta, H.H., Pogemiller, J.E., Standley, R.W. and Mackenzie, K.D., IEEE Trans, on Electron Device 36, 2883(1989)CrossRefGoogle Scholar
[2] Kalbitzer, S., Muller, G., Le Comber, P.G. and Spear, W.E., Phil. Mag. B 41, 439 (1980)CrossRefGoogle Scholar
[3] Tsukada, T., Seki, K., Yamamoto, H. and Sasano, A., Mat. Res. Soc. Sym. Proc., Vol. 33, pp. 301–307 Google Scholar