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A New Sublimation Etching for Reproducible Growth of Epitaxial Layers of SiC on SiC Substrate in a CVD Reactor

Published online by Cambridge University Press:  21 March 2011

Rongjun Wang ,
Ishwara Bhat  and
Paul Chow
Rongjun Wang
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180-3590, 518-276-2786, 518-276-2433, bhati@rpi.edu
Ishwara Bhat
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180-3590, 518-276-2786, 518-276-2433, bhati@rpi.edu
Paul Chow
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180-3590, 518-276-2786, 518-276-2433, bhati@rpi.edu
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Abstract

We have developed a new and simple method to etch SiC at relatively low temperature with very high rates. This method is particularly useful for cleaning the susceptor after growth. By employing this etching method to clean the susceptor prior to every growth run, we have greatly improved the reproducibility of SiC epitaxial growth and increased the lifetime of the susceptor. The method can also be used to etch SiC wafers at a very fast rate as an alternative to mechanical polishing. An etch rate of over 100μm/hr was obtained at 1600°C using this new method. The surfaces of the etched wafers were examined by atomic force microscope (AFM). Results of epitaxial growth using new etching method are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H2.6
Copyright
Copyright © Materials Research Society 2001

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References

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