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Nickel Silicide Structures on Single-Crystal Silicon Membranes

Published online by Cambridge University Press:  26 February 2011

P. Hren ,
A. Fernandez  and
J. Silcox
P. Hren
Affiliation:
School of Applied and Engineering Physics and National Nanofabrication Facility Cornell University, Ithaca, NY 14853
A. Fernandez
Affiliation:
School of Applied and Engineering Physics and National Nanofabrication Facility Cornell University, Ithaca, NY 14853
J. Silcox
Affiliation:
School of Applied and Engineering Physics and National Nanofabrication Facility Cornell University, Ithaca, NY 14853
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Abstract

Nickel structures have been deposited on large (300 μm diameter), thin (1400 to 3000Å) single crystal (111) silicon membranes. On annealing, the nickel-silicon reaction generates strain which can be partially accommodated through buckling of the membrane, a mode of strain relief not available on bulk wafers. Examples of such buckling are presented in this paper. Features of the silicide structures observed include thin epitaxial Ni2 Si that grows on clean surfaces during deposition, vertical and lateral growth of NiSi2 into the membrane from nickel dots, and the absence of interfacial dislocations between NiSi2 and silicon, probably due to the stress relief.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 383
Copyright
Copyright © Materials Research Society 1988

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References

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