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Nisi2-Formation By 6 Mev High Dose Nickel Implantation Into Silicon

Published online by Cambridge University Press:  28 February 2011

J.K.N. Lindner  and
E.H.Te Kaat
J.K.N. Lindner
Affiliation:
Inst. of Physics, University of Dortmund, POB 500500, D-4600 Dortmund, FRG
E.H.Te Kaat
Affiliation:
Inst. of Physics, University of Dortmund, POB 500500, D-4600 Dortmund, FRG
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Abstract

Deep buried metallic layers are formed by 6 MeV high dose Ni implantation into Si at 450 K. The layers have been characterized by optical reflectivity and spreading resistance depth profiling as well as TEM and XTEM. They consist of epitaxially grown NiSi2 crystallites of both type-A and type-B orientations and thin NiSi2-platelets on {111} lattice planes. Investigations indicate the suppression of amorphization by Ni as well as damage gettering of Ni atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 275
Copyright
Copyright © Materials Research Society 1988

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