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Ni/Si-Based Ohmic Contacts to p- and n-Type GaN

Published online by Cambridge University Press:  10 February 2011

E. Kamińska ,
A. Piotrowska ,
A. Barcz ,
M. Guziewicz ,
S. Kasjaniuk ,
M. D. Bremser ,
R. F. Davis ,
E. Dynowska  and
S. Kwiatkowski
E. Kamińska
Affiliation:
Institute of Electron Technology, Al.Lotników 46, Warsaw, Poland, eliana@ite.waw.pl
A. Piotrowska
Affiliation:
Institute of Electron Technology, Al.Lotników 46, Warsaw, Poland, eliana@ite.waw.pl
A. Barcz
Affiliation:
Institute of Electron Technology, Al.Lotników 46, Warsaw, Poland, eliana@ite.waw.pl
M. Guziewicz
Affiliation:
Institute of Electron Technology, Al.Lotników 46, Warsaw, Poland, eliana@ite.waw.pl
S. Kasjaniuk
Affiliation:
Institute of Electron Technology, Al.Lotników 46, Warsaw, Poland, eliana@ite.waw.pl
M. D. Bremser
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 Aixtron AG, Kackertstrasse 15-17, Aachen, Germany
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
E. Dynowska
Affiliation:
Institute of Physics, PAS, Al.Lotników 46, Warszawa, Poland
S. Kwiatkowski
Affiliation:
Institute for Nuclear Studies, Hoza 69, Warszawa, Poland
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Abstract

Ni/Si-based ohmic contact scheme for GaN, based on the solid-phase regrowth (SPR) mechanism have been developed. Using Mg and Si as dopant species, ohmic contacts with a resistivity of ∼1*10-3Ωcm2 to p-GaN (p≈3*1017 cm-3) and n-GaN (n≈2*1017cm-3), respectively, have been obtained. SIMS, XRD, and RBS analysis show in as-deposited contacts, an initial reaction at GaN/Ni interface, leading to the formation of an Ni-Ga-N layer. The ohmic behavior of contacts, observed after annealing at 400°C, is accompanied by structural transformations in the contact region: i) the decomposition of Ni-Ga-N layer and ii) the growth of NiSi compound.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 1077
Copyright
Copyright © Materials Research Society 1998

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