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Non-Contact, No Wafer Preparation Deep Level Transient Spectroscopy (DlTS) Based on Surface Photovoltage (SPV)

Published online by Cambridge University Press:  22 February 2011

Jacek Lagowski ,
Piotr Edelman  and
Mark Dexter
Jacek Lagowski
Affiliation:
Center for Microelectronics Research, University of South Florida, Tampa, FL
Piotr Edelman
Affiliation:
Center for Microelectronics Research, University of South Florida, Tampa, FL
Mark Dexter
Affiliation:
Center for Microelectronics Research, University of South Florida, Tampa, FL
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Abstract

This work reports on the theoretical modeling and experimental investigation of isothermal SPV-DLTS based on the rate window concept. Experimental implementation of the technique is done using computer analysis of the SPV transients after ceasing the illumination. The transient involves two processes – a recombination of excess minority carriers and a thermal emission of carriers trapped by surface states and bulk defects. The later process is the key one for deep level defect determination.

The upper limit for the measurable deep level emission rate is provided by the recombination lifetime. This limit often exceeds, by orders of magnitude, the standard 103 s−1 limit in capacitance DLTS. The sensitivity of SPV-DLTS is of the same order as that of optical capacitance DLTS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 261: Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect , 1992 , 217
Copyright
Copyright © Materials Research Society 1992

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References

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