Article contents
Nonlinear Optical Properties and Fatigue Effect in Porous Silicon
Published online by Cambridge University Press: 25 February 2011
Abstract
We report results of photoluminescence (PL) fatigue and nonlinear optical absorption in anodized porous silicon (PS) samples aged in air for a few months. The fatigue strength is found different for PS emitting below 1.65 eV, in 1.65 - 2.05 eV range and above 2.05 eV, revealing the different nature of PL. A comparison with two special glasses is made, and a possible explanation for PL mechanism in PS is discussed.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1993
References
- 2
- Cited by