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Non-Radiative Competition in the Excitation of Erbium Implanted Silicon Light Emitting Devices

Published online by Cambridge University Press:  21 February 2011

T Taskin ,
Q Huda ,
A Scholes ,
J H Evans ,
A R Peaker ,
P Hemment ,
C Jeynes  and
Z Jafri
T Taskin
Affiliation:
Centre for Electronic Materials, University of Manchester Institute of Science and Technology, PO Box 88, Manchester, M60 1QD, UK
Q Huda
Affiliation:
Centre for Electronic Materials, University of Manchester Institute of Science and Technology, PO Box 88, Manchester, M60 1QD, UK
A Scholes
Affiliation:
Centre for Electronic Materials, University of Manchester Institute of Science and Technology, PO Box 88, Manchester, M60 1QD, UK
J H Evans
Affiliation:
Centre for Electronic Materials, University of Manchester Institute of Science and Technology, PO Box 88, Manchester, M60 1QD, UK
A R Peaker
Affiliation:
Centre for Electronic Materials, University of Manchester Institute of Science and Technology, PO Box 88, Manchester, M60 1QD, UK
P Hemment
Affiliation:
Department of Electrical and Electronic Engineering, University of Surrey, Guildford, Surrey, UK
C Jeynes
Affiliation:
Department of Electrical and Electronic Engineering, University of Surrey, Guildford, Surrey, UK
Z Jafri
Affiliation:
Department of Electrical and Electronic Engineering, University of Surrey, Guildford, Surrey, UK
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Abstract

This paper reports a study of the non-radiative processes competing with the excitation of the erbium ion in layers implanted with high concentrations of erbium and oxygen. These processes reduce the luminescence efficiency of the Si:Er system and dramatically increase the threshold current density calculated to be necessary for an ultimate goal, the Si/Ge:Er LASER. Using cross sectional TEM, photoluminescence as a function of temperature and DLTS, it is demonstrated that a two stage anneal procedure which avoids the formation of extended defects and removes specific deep states is necessary to obtain efficient Er3+ excitation at high erbium concentrations. Comparisons are made with damage resulting from germanium implantation into silicon. The role of multiple stage anneals is discussed in relation to the removal of Shockley-Hall-Read recombination centres

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 392: Symposium U – Thin Films for Integrated Optics Applications , 1995 , 223
Copyright
Copyright © Materials Research Society 1995

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