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A Novel Preparation Technique Termed “Chemical Annealing” to make a Rigid and Stable Si-Network

Published online by Cambridge University Press:  21 February 2011

Hajime Shirai ,
Jun-Ichi Hanna  and
Isamu Shimizu
Hajime Shirai
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama, 227, Japan
Jun-Ichi Hanna
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama, 227, Japan
Isamu Shimizu
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama, 227, Japan
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Abstract

A novel preparation technique termed “Chemical Annealing (CA)” was developed with aim of making a stable and rigid structure of Si-network. The a-Si:H films were made by the alternate deposition of several tens angstrom thick a-Si:H and the treatment with atomic hydrogen or excited novel gases such as Ar* and He*. Hydrogen contents (CH) and optical gap (Eg) in the film prepared by this tecnique were able to reduced by CH of 1.5at%, and Eg of 1.5eV, respectively at substrate temperature:300C. All of them exhibited high photoconductivities in the level of 10-5 10-4 S/cm under illumination of 100mW/cm2. In the films with CH of 3at% or less, in particular, marked improvement was confirmed in the stability after light soaking. In addition, the time-of-flight measurement revealed a non-dispersive transport and a significant enhancement in the drift mobility of holes up to 0.2cmm2/Vs at room temperature in the film with CH : 5at% and Eg:1.65eV prepared at 300C. Advantages of the CA process are summarized together with the discussion of role of atomic hydrogen, excited novel gases such as Ar* and He* in the growing surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 643
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Jackson, W.B., Marshall, J.M. and Moyer, M.D.: Phys. Rev., B32 (1989) 3609 Google Scholar
[2] Stuztmann, M., Jackson, W.B. and Tsai, C.C.: Phys. Rev., B32(1985) 23 Google Scholar
[3] Stuztmann, M.: Philo. Mag., B33 (1986) L15 CrossRefGoogle Scholar
[4] Jackson, W.B. : Proc. of Int. Con. of 5th PVSEC (Kyoto) (1990) 53 Google Scholar
[5] Street, R.A.: Phys. Rev., 49(1982) 1187 Google Scholar
[6] Pankove, J.I., Lampert, M.A., and Tamg, M.L.: Appl. Phys. Lett., 32 (1978)439 Google Scholar
[7] Perrin, J. and Broekheizen, T. : Mat. Res. Soc. Symp. Proc., 75(1987) 201 Google Scholar
[8] Itabashi, N., Kato, K., Nishiwaki, N., Goto, T., Yamada, C., and Hirota, E.,: Jpn. J. Appl. Phys., 27(1988)L1565, 28(1989)L325Google Scholar
[9] Nights, J.C.: Jpn. J. Appl Phys., Supp 11 (1979) 101 Google Scholar
[10] Perrin, J. and Broekheizen, T.: Mat. Res. Soc. Symp. Proc. 75(1987) 201 CrossRefGoogle Scholar
[11] Matsuda, A. and Goto, T., Mat. Res. Soc. Symp. Proc. (1989)Google Scholar
[12] Tanabe, H., Azuma, M., Shirai, H., Hanna, J. and Shimizu, I.: Mat. Res. Soc. Symp. Proc. Vol. 149 (1989) 17 Google Scholar
[13] Asano, A. : Appl. Phys. Lett., 56(1990) 553 Google Scholar
[14] Shirai, H., Hanna, J. and Shimizu, I.: Jpn. J. Appl. Phys., 30(1991) L881 Google Scholar
[15] Das, D., Shirai, H., Hanna, J. and Shimizu, I. : Jpn. J. Appl. Phys., 30(1991) L239 Google Scholar
[16] Shirai, H., Das, D., Hanna, J. and Shimizu, I. : Proc. of Int. Con. of 5th PVSEC Kyoto) (1990) 59 Google Scholar
[17] Tanaka, K. and Matsuda, A. : Mat. Sci. Rep., 2(1987) 139 Google Scholar
[18] Nakamura, M., Ohno, T., Miyata, K., Konishi, K. : Appl. Phys. Lett., 65(1989) 3061 Google Scholar
[19] Carlson, D.E. and Magee, C.M.: Appl. Phys. Lett., 33 (1978) 81 Google Scholar