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The Nucleation and Growth of Germanium on (1102) Sapphire Deposited by Molecular Beam Epitaxy

Published online by Cambridge University Press:  28 February 2011

David J. Godbey  and
Mark E. Twigg
David J. Godbey
Affiliation:
Naval Research Laboratory, Electronics Science and Technology Division Code.6816, Washington, D.C. 20375-5000
Mark E. Twigg
Affiliation:
Naval Research Laboratory, Electronics Science and Technology Division Code.6816, Washington, D.C. 20375-5000
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Extract

Single crystal undoped germanium has been grown successfully for the first time on (1102) sapphire [1,2]. Germanium was found to grow (110) with an in plane registry of Ge(111)/Al203(1012) [1]. When a 2μm germanium film was grown on (1102) sapphire at 800°C and after a substrate preanneal of 1400°C, the X-ray line width of the Ge(220) reflection was measured to be 230 arcseconds [2]. Strain was observed only in germanium films that were thinner than 40 nm [2].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 505
Copyright
Copyright © Materials Research Society 1990

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References

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