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Nucleation and Stochiometry Dependence of Rutile-TiO2(001)/GaN(0001) Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

Costel Constantin ,
kai sun  and
Randall M Feenstra
Costel Constantin
Affiliation:
constaco@shu.edu, Seton Hall University, Physics, South Orange, New Jersey, United States
kai sun
Affiliation:
kaisun@umich.edu, University of Michigan, Material Science and Engineering, Ann Arbor, Michigan, United States
Randall M Feenstra
Affiliation:
feenstra@andrew.cmu.edu, Carnegie Mellon University, Physics, Pittsburgh, Pennsylvania, United States
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Abstract

In this work we explore both the initial nucleation and the stoichiometry of rutile-TiO2(001) grown on wurtzite GaN(0001) by radio-frequency O2-plasma molecular beam epitaxy. Two studies are performed; in the first, the dependence of the growth on stoichiometry (Ti-rich and O-rich) is observed using reflection high energy electron diffraction and high resolution transmission electron microscopy. In the second study we examine the effect of different initial nucleation surfaces (i.e. Ga-terminated and excess Ga-terminated) and compare the interfaces and bulk crystallinity of the TiO2(001) films grown on top of these surfaces. High-resolution transmission electron microscopy and x-ray diffraction measurements show a better interface for TiO2(001)/Ga-terminated - GaN(0001) as compared to the TiO2(001)/excess Ga-terminated- GaN(0001).

Keywords

molecular beam epitaxy (MBE)semiconductingoxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1108: Symposium A – Performance and Reliability of Semiconductor Devices , 2008 , 1108-A09-32
Copyright
Copyright © Materials Research Society 2009

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References

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