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Nucleation on Defects in Heteroepitaxy

Published online by Cambridge University Press:  15 February 2011

J. A. Venables
J. A. Venables*
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe AZ 85287–1504, School of Chemistry, Physics and Environmental Science, University of Sussex, Brighton, UK.
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Abstract

The rate equation treatment of nucleation and growth on perfect substrates has been extended to cover nucleation on random defect sites, and problems involving 1-dimensional (1D) diffusion to sinks. This paper recaps the results of rate equation treatments on perfect terraces, and sumnarises some new models, including: 1) nucleation on point defects, with application to nm-sized Fe and Co particles grown on various CaF2 substrates; 2) nucleation and diffusion in finite 1D deposits, with application to diffusion over, and the break-up of, multilayer deposits of Ag/Ge(111) and Ag/Fe(110); 3) 1D models developed for nucleation in competition with step capture. Comparison of rate-diffusion equations with experiment can result in values for, or bounds on, the controlling energies, in a way which illuminates the main features of interatomic forces at surfaces. The use of defects to grow thin film arrays for practical application presents some interesting challenges at both the nucleation and growth stages, which are discussed briefly.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 440: Symposia CA – Structure and Evolution of Surfaces , 1996 , 129
Copyright
Copyright © Materials Research Society 1997

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References

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