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OBIC Measurements on 6H-SiC Schottky Diodes

Published online by Cambridge University Press:  15 February 2011

K. Rottner ,
A. Schöner ,
M. Frischholz  and
R. Helbig
K. Rottner
Affiliation:
IMC, P.O. Box 1084, S-16421 Stockholm-Kista, Sweden
A. Schöner
Affiliation:
IMC, P.O. Box 1084, S-16421 Stockholm-Kista, Sweden
M. Frischholz
Affiliation:
Institut für Angewandte Physik, Universität Erlangen, Staudtstr. 7, D-91058 Erlangen, Germany
R. Helbig
Affiliation:
Institut für Angewandte Physik, Universität Erlangen, Staudtstr. 7, D-91058 Erlangen, Germany
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Abstract

The OBIC (Optical Beam Induced Current) technique is a powerful method to investigate the electric field distribution of p-n junctions in SiC. In a previous work we found strong indications for the presence of a high density of negative surface charge in n-type SiC. In order to study samples of both conductivity types under similar conditions we prepared Schottky contacts on ntype and p-type 6H-SiC CVD epitaxial layers.

OBIC measurements show an extension of the depletion region of several hundreds of microns from the edge of the contact on n- and p-type samples, thus interconnecting diodes on an area up to several mm2. Our results imply that there is no fixed surface charge but a high density of both acceptor- and donorlike surface states leading to a dependence of the net surface charge on the Fermi energy, in which case the sign of the surface charge reverses from negative on ntype material to positive on p-type 6H-SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 51
Copyright
Copyright © Materials Research Society 1996

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References

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