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Observation of Open-Ended Stacking Fault Tetrahedra in Si0.85Ge0.15 Grown on V-Grooved (001) Si and Planar (111) Si Substrates

Published online by Cambridge University Press:  21 February 2011

David J. Howard  and
David C. Paine
David J. Howard
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
David C. Paine
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
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Abstract

A new strain relief mechanism was observed in thin films of Si0.85Ge0.15 grown by RTCVD (rapid thermal chemical vapor deposition) on patterned (001) and planar (111) Si substrates. The (001) Si substrates were lithographically patterned and anisotropically etched to produce a line pattern of V-shaped grooves running in the [110] direction where the walls of the grooves were the {111} crystal planes lying in the [110] zone. Cross-section and plan-view TEM (transmission electron microscopy) studies revealed the presence of open ended stacking fault tetrahedra in strained-layer Si0.85Ge0.15 grown both on (111) Si wafers and the {111} sidewalls of the patterned (001) Si wafers. No defects were observed in the (001) portions of the films grown on non-planar substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 319: Symposia CB – Defect-Interface Interactions , 1993 , 177
Copyright
Copyright © Materials Research Society 1994

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