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Ohmic and Rectifying Contacts on High Resistivity P-Type Cadmium Telluride

Published online by Cambridge University Press:  15 February 2011

A. Musa ,
J.P. Ponpon  and
M. Hage-Ali
A. Musa
Affiliation:
Centre De Recherches Nucleaires ,Laboratoire Phase67037 Strasbourg-Cedex France
J.P. Ponpon
Affiliation:
Centre De Recherches Nucleaires ,Laboratoire Phase67037 Strasbourg-Cedex France
M. Hage-Ali
Affiliation:
Centre De Recherches Nucleaires ,Laboratoire Phase67037 Strasbourg-Cedex France
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Abstract

Ohmic and rectifying contacts on high resistivity etched P-type cadmium telluride have been studied in order to produce diode structures.For this,we have first investigated the properties of gold contacts obtained by chemical reactions of CdTe dippedin gold chloride.Both electrical characterization and structure have been analyzed as a function of the experimental conditions of the contact deposition.The results can be interpreted in terms of a current flow enhanced by tunnelling through the Au-CdTe junction and related to the structure of the interface a few tens of nanometer below the gold contact. In addition,several rectifying contacts have been investigated , in order to achieve a structure having low leakage current.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 16: Symposium – F Nuclear Radiation Detector Materials , 1982 , 225
Copyright
Copyright © Materials Research Society 1983

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References

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