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Omcvd Elaboration and Characterization of Silicon Carbide and Carbon-Silicon Carbide Films from Organosilicon Compounds

Published online by Cambridge University Press:  25 February 2011

R. Morancho ,
A. Reynes ,
M'b. Amjoud  and
R. Carles
R. Morancho
Affiliation:
Ecole Nationale Supérieure de Chimie de Toulouse, Laboratoire des Matériaux (URA 445 CNRS), 118 Route de Narbonne 31077 Toulouse Cedex France
A. Reynes
Affiliation:
Ecole Nationale Supérieure de Chimie de Toulouse, Laboratoire des Matériaux (URA 445 CNRS), 118 Route de Narbonne 31077 Toulouse Cedex France
M'b. Amjoud
Affiliation:
Ecole Nationale Supérieure de Chimie de Toulouse, Laboratoire des Matériaux (URA 445 CNRS), 118 Route de Narbonne 31077 Toulouse Cedex France
R. Carles
Affiliation:
Université Paul Sabatier, Laboratoire de Physique des Solides (URA 074 CNRS), 118 Route de Narbonne 31062 Toulouse Cedex France
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Abstract

Two organosilicon molecules tetraethysilane (TESi) and tetravinylsilane (TVSi) were used to prepare thin films of silicon carbide by chemical vapor deposition (C. V. D.). In each of the molecule, the ratio C/Si = 8, the only difference between TESi and TVSi is the structure of the radicals ethyl (.CH2-CH3) and vinyl (.CH=CH2). This feature induces different thermal behavior and leads to the formation of different materials depending on the nature of the carrier gas He or H2· The decomposition gases are correlated with the material deposited which is investigated by I.R. and Raman spectroscopy. The structure of the starting molecule influences the mechanisms of decomposition and consequently the structure of the material obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 271: Symposium N – Better Ceramics Through Chemistry V , 1992 , 939
Copyright
Copyright © Materials Research Society 1992

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References

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