Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-09T05:51:57.419Z Has data issue: false hasContentIssue false
  • English
  • Français

On Energy and Dose Effects During Ion-Assisted Epitaxial Growth of InAs on Si(100)

Published online by Cambridge University Press:  25 February 2011

C.-H. Choi  and
S. A. Barnett
C.-H. Choi
Affiliation:
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston IL 60208
S. A. Barnett
Affiliation:
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston IL 60208
Get access

Abstract

Epitaxial InAs films have been grown on Si(100) substrates using triode ion-assisted deposition (TRIAD). The ratio r of the impinging Ar ion flux J to the deposited InAs flux was varied from 2.5 to 8.5 for Ar ion energies E from 5 to 55 eV. The growth temperature T was 350°C while the growth rate R was fixed at 0.6 μm/h. Two types of experiments were carried out. First, in order to investigate ion damage effects, X-ray diffraction rocking curve full-widths at half-maximum (FWHM) were measured as a function of E and r. In these experiments, the first 50 nm of InAs was always grown under the same conditions, r = 5 and E = 25 eV, in order to eliminate possible complicating effects caused by ion irradiation during InAs nucleation on Si, followed by 550 nm of growth at different E and r values. FWHM values increased with increasing E and r from 2800 arcsec, a value limited by defects arising from the 11% mismatch between InAs and Si, to 8900 arcsec as a result of ion damage. The FWHM value was found to be dependent on the total number of atomic displacements due to ion irradiation, estimated using a modified Kinchin-Pease expression. In the second set of experiments, E during the first 50 nm of growth was varied while ion irradiation damage in the remaining 5500 nm was minimized. Increasing E from 15 to 40 eV resulted in a decrease in the FWHM from 5500 to 2600 arcsec, followed by a gradual increase when E was increased above 40 eV. Ion irradiation at the onset of film growth thus reduced the propagation of defects from the InAs/Si interface into the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 689
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yamada, H. and Torii, Y., J. Appl. Phys. 64, 702 (1988).Google Scholar
2. Narusawa, T., Shimizu, S., Komiya, S., J. Vac. Sci. Technol. 16, 366 (1979).Google Scholar
3. Thomas, G.E., Beckers, L.J., Vrakking, J.J., and Koning, B.R. de, J. Cryst. Growth 56, 257 (1982).10.1016/0022-0248(82)90039-2Google Scholar
4. Herbots, N., Noggle, T.S., Appleton, B.R., and Zhur, R.A., J. Vac. Sci. Technol, in press.Google Scholar
5. Hultman, L., Helmersson, U., Barnett, S.A., Sundgren, J.-E., and Greene, J.E., J. Appl. Phys. 61, 552 (1987).Google Scholar
6. Hultman, L., Barnett, S.A., Sundgren, J.-E., Greene, J.E., J. Cryst. Growth, in press.Google Scholar
7. Ota, Y., J. Appl. Phys. 51, 1102 (1980).CrossRefGoogle Scholar
8. Sugiura, H., J. Appl. Phys. 51, 2630 (1980).CrossRefGoogle Scholar
9. See Greene, J.E., Barnett, S.A., Rockett, A., and Bajor, G., Appl. Surf. Sci. 22/23, 520 (1985), and references contained therein.Google Scholar
10. Hasan, M.A., Knall, J., Barnett, S.A., Sundgren, J.-E., Markert, L.C., Rockett, A., and Greene, J.E., J. Appl. Phys., in press.Google Scholar
11. Shimizu, S., Tsukakoshi, T., Komiya, S., and Makita, Y., in GaAs and Related Compounds (1985), Ed. by Fujimoto, M., Inst. Phys. Conf. Ser. No. 79, p. 91.Google Scholar
12. Maruno, S., Morishita, Y., Isu, T., Nomura, Y., and Ogata, H., J. Electronic Mater. 17, 21 (1988).Google Scholar
13. Barnett, S.A., Kramer, B., Romano, L.T., Shah, S.I., Ray, M.A., Fang, S., and Greene, J.E., in Layered Structures, Epitaxy, and Interfaces, Ed. by Gibson, J.M. and Dawson, L.R., Mater. Res. Soc., Pittsburgh, 1985, p. 285.Google Scholar
14. Greene, J.E., J. Vac. Sci. Technol. A 5, 1947 (1987).Google Scholar
15. Comfort, J.H., Garverick, L.M., and Reif, R., J. Appl. Phys. 62, 3388 (1987).Google Scholar
16. Garverick, L.M., Comfort, J.H., Uyeh, T.R., Reif, R., Baiocchi, R.A., and Luftman, H.S., J. Appl. Phys. 62, 3398 (1987).Google Scholar
17. Rohde, S., Barnett, S.A., and Choi, C.-H., J. Vac. Sci. Technol. A, in press.Google Scholar
18. Ziemann, P., Koehler, K., Coburn, J.W., and Kay, E., J. Vac. Sci. Technol. B 1, 31 (1983).Google Scholar
19. Macrander, A.T., Dupuis, R.D., Bean, J.C., and Brown, J.M., in Semiconductor-Based Heterostructures, Ed. by Green, M.L., Baglin, J.E.E., Chin, G.Y., Deckman, H.W., Mayo, W., and Narasinham, D., (Metall. Soc., 1986), p. 75.Google Scholar
20. Sheldon, P., Jones, K.M., Al-Jassim, M.M., and Yacobi, B.G., J. Appl. Phys. 63, 5609 (1988).CrossRefGoogle Scholar
21. Kalem, S., Chyi, J., Litton, C.W., Morkoc, H., Kan, S.C., and Yariv, A., Appl. Phys. Lett. 53, 562 (1988).10.1063/1.99857Google Scholar
22. Kinchin, G.H and Pease, R.S., Rep. Prog. Phys. 18, 1 (1955).CrossRefGoogle Scholar
23. Hobbs, L.I., in Introduction to Analytical Electron Microscopy, Ed. By Hren, J.J., Goldstein, J.I., and Joy, D.C. (Plenum, New York, 1979), p. 446.Google Scholar
24. Turner, G.W., in Semiconductor-Based Heterostructures, Ed. by Green, M.L., Baglin, J.E.E., Chin, G.Y., Deckman, H.W., Mayo, W., and Narasinham, D., (Metall. Soc., 1986), p. 235.Google Scholar