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On the Methodology of Numerical Etching

Published online by Cambridge University Press:  10 February 2011

X. H. Wang ,
K. Shyu ,
C.-T. Chang ,
D. W. Zheng  and
Weijia Wen
X. H. Wang
Affiliation:
Microstress Technology, LLC 18645 East Gale Avenue, Suite 200, City of Industry, CA 91748, xinhua@microstress.com
K. Shyu
Affiliation:
Microstress Technology, LLC 18645 East Gale Avenue, Suite 200, City of Industry, CA 91748, xinhua@microstress.com
C.-T. Chang
Affiliation:
Microstress Technology, LLC 18645 East Gale Avenue, Suite 200, City of Industry, CA 91748, xinhua@microstress.com
D. W. Zheng
Affiliation:
Department of Materials Science and Engineering, UCLA, Los Angeles, CA 90095
Weijia Wen
Affiliation:
Department of Materials Science and Engineering, UCLA, Los Angeles, CA 90095
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Abstract

A methodology to study the stress distribution of a patterned thin film residing on a silicon wafer was developed. Si underlying the pattern was thinned down through etching so that the deformation caused by residual stress in the microstructure could be detected by a Twyman- Green interferometer. A procedure called "numerical etching" was implemented to simulate the etching process, which linked the stress state of the microstructure on a regular wafer to that on a Si diaphragm. An initial stress field on the pattern was assumed, and its effect on the deformation of the Si diaphragm beneath was calculated and compared with experimental results. The discrepancy between them was used to modify the initially assumed stress field and repeated until a satisfactory match was achieved. The stress field from numerical analysis accurately predicts the actual stress distribution in and around the patterned structure under investigation. The stress distribution in a Ti pad on a Si3N4/ SiO2/Si composite diaphragm is used as an example.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 563: Symposium M – Materials Reliability in Microelectronics IX , 1999 , 243
Copyright
Copyright © Materials Research Society 1999

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References

1. Stoney, G.G., Proc. Royal Soc. A82 172 (1909).Google Scholar
2. Malhotra, S.G., Rek, Z.U., Yalisove, S.M.. and Bilello, J.C., J. Appl. Phys. 79 (9), 1996.Google Scholar
3. M.A. Marcus, K.E. Lutterodt, e.d. Isaacs, Presentation at Mater. Res. Soc. Spring meeting, San Fransico, 1998.Google Scholar
4. Doemer, M.F., Ph.D dissertation, Stanford Univ., 1987.Google Scholar
5. Th. Englert and Abstreiter, G., Solid-State Electronics 23, 31(1980).Google Scholar
6. Ajito, K., Sukamto, J.P. H., Nagahara, L.A., Hashimoto, K.. and Fujishima, A., J. Vac. Sci. Technol. Technol. A13 (3), 1234(1995).Google Scholar
7. Okada, Y. and Nakajima, S.-I., Appl. Phys. Lett. 59 (9), 1066(1991).Google Scholar
8. Shi, G., Block System Modeling by Discontinuous Deformation Analysis (Computational Mechanics Publications, Southampton, UK and Boston, USA, 1993).Google Scholar
9. Shyu, K., “Nodal Based Discontinuous Deformation Analysis,” Ph.D dissertation, Department of Civil Engineering, University of California at Berkeley, 1993.Google Scholar
10. Chang, C.-T., “Nonlinear Dynamic Discontinuous Deformation Analysis with Finite Element Meshed Block System”, Ph.D dissertation, Department of Civil Engineering, University of California at Berkeley, 1994.Google Scholar
11. Biao, Xie Ru, Qing, Jiang Pei, “Nonlinear Numerical Analysis,” Shang Hai Jiao Tong university press, 1984.Google Scholar
12. Zheng, D. W., Xinhua Wang, Shyu, K., Chang, C.-T., Guo, Y., Sarihan, B., Wen, Weijia. and Tu, K. N., “A Study of Local Stress Using Stress-absorbing Si Diaphragm,” 1999 (unpublished).Google Scholar