Hostname: page-component-7bb8b95d7b-fmk2r Total loading time: 0 Render date: 2024-09-11T13:21:43.598Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical and Electrical Properties of Gallium-Doped Mg15Zn85O Thin Films

Published online by Cambridge University Press:  01 February 2011

Wei Wei ,
Vikram Bhosle ,
Chunming Jin  and
Roger J Narayan
Wei Wei
Affiliation:
wwei@ncsu.edu, North Carolina State University, Materials Science and Engineering, 3030 Engineering Building I, 911 Partners Way, Raleigh, NC, 27695-7907, United States, 919-515-7219
Vikram Bhosle
Affiliation:
vmbhosle@unity.ncsu.edu, North Carolina State University, Materials Science and Engineering, 3030 Engineering Building I, 911 Partners Way, Raleigh, NC, 27695-7907, United States
Chunming Jin
Affiliation:
cjin@ncsu.edu, North Carolina State University, Biomedical Engineering, 3030 Engineering Building I, 911 Partners Way, Raleigh, NC, 27695-7115, United States
Roger J Narayan
Affiliation:
roger_narayan@ncsu.edu, North Carolina State University, Biomedical Engineering, 3030 Engineering Building I, 911 Partners Way, Raleigh, NC, 27695-7115, United States
Get access

Abstract

Ga-doped Mg0.15Zn0.85O thin films have been grown on fused silica substrates at 350°C with four different gallium concentration values using pulsed laser deposition. X-ray diffraction results indicate that these films were textured with c-plane parallel to the substrate surface. The bandgap of the films were determined based on the absorption measurements. The bandgaps of the Ga-doped thin films shifted to higher energy with respect to that of the unalloyed Mg0.15Zn0.85O thin film due to the band filling effect of electron distribution in the conduction band. Resistivity of the films was measured with four-point probe at temperatures from 295 K to 15 K. The activation energy of the gallium dopants was extracted by fitting the temperature dependent curve of resistivity.

Keywords

laser ablationelectronic materialthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K10-47
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ginley, D. S., and Bright, C., MRS Bulletin 25, 15 (2000).Google Scholar
2. Lewis, Brian G., and Paine, D. C., MRS Bulletin 25, 22 (2000).Google Scholar
3. Bhosle, V., Tiwari, A., and Narayan, J., Journal of Applied Physics 100, 33713 (2006).Google Scholar
4. Minami, T., MRS Bull. 25, 38 (2000).Google Scholar
5. Jin, C. and Narayan, R. J., Journal of Electronic Materials, 35, 869 (2006).Google Scholar
6. Roth, A., Webb, J., and Williams, D., Physical Review B, 25, 7836 (1982).Google Scholar
7. Roberts, G., Apsley, N., and Munn, R., Physical Reports 60, 59 (1980).Google Scholar