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Optical Properties of InAs/InP Planar Quantum Dot Microcavities

Published online by Cambridge University Press:  11 February 2011

Dan Dalacu ,
Daniel Poitras ,
Jacques Lefebvre ,
Philip J. Poole ,
Geoff C. Aers  and
Robin L. Williams
Dan Dalacu
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada
Daniel Poitras
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada
Jacques Lefebvre
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada
Philip J. Poole
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada
Geoff C. Aers
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada
Robin L. Williams
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada
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Abstract

Planar InAs/InP quantum dot microcavities using multi-layer SiO2/Ta2O5 Bragg reflectors have been studied in emission. The spectra exhibit collection optics-limited cavity linewidths of ∼1meV with the occasional ∼200μeV single-dot emission. Measurements as a function of incident power show quantum dot saturation behavior, with transfer of oscillator strength to the wetting layer outside the cavity stop band. Saturation behavior at fixed pump power is also observed as a function of decreasing temperature. Dispersion measurements as a function of emission angle show polarization splitting in qualitative agreement with theory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , E7.3
Copyright
Copyright © Materials Research Society 2003

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